Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

De Sheng Jiang*, Yu Hua Qu, Hai Qiao Ni, Donghai Wu, Ying Qiang Xu, Zhi Chuan Niu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 μm with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 °C with a short duration of 10 s is suggested for optimizing the annealing effect.

Original languageEnglish (US)
Pages (from-to)12-17
Number of pages6
JournalJournal of Crystal Growth
Volume288
Issue number1
DOIs
StatePublished - Feb 2 2006
EventInternational Conference on Materials for Advanced Technologies -
Duration: Jul 4 2005Jul 8 2005

Keywords

  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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