Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

De Sheng Jiang; Yu Hua Qu; Hai Qiao Ni; Donghai Wu; Ying Qiang Xu; Zhi Chuan Niu

doi:10.1016/j.jcrysgro.2005.12.016

Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

De Sheng Jiang^*, Yu Hua Qu, Hai Qiao Ni, Donghai Wu, Ying Qiang Xu, Zhi Chuan Niu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 μm with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 °C with a short duration of 10 s is suggested for optimizing the annealing effect.

Original language	English (US)
Pages (from-to)	12-17
Number of pages	6
Journal	Journal of Crystal Growth
Volume	288
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.016
State	Published - Feb 2 2006
Event	International Conference on Materials for Advanced Technologies - Duration: Jul 4 2005 → Jul 8 2005

Keywords

A3. Molecular beam epitaxy
A3. Quantum wells
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2005.12.016

Cite this

@article{86cc2d7a2721437f90f2fe156a5d28a3,

title = "Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy",

abstract = "It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 μm with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 °C with a short duration of 10 s is suggested for optimizing the annealing effect.",

keywords = "A3. Molecular beam epitaxy, A3. Quantum wells, B2. Semiconducting III-V materials",

author = "Jiang, {De Sheng} and Qu, {Yu Hua} and Ni, {Hai Qiao} and Donghai Wu and Xu, {Ying Qiang} and Niu, {Zhi Chuan}",

note = "Funding Information: This work was partly supported by the National Natural Science Foundation of China with Grant no. 60276003.; International Conference on Materials for Advanced Technologies ; Conference date: 04-07-2005 Through 08-07-2005",

year = "2006",

month = feb,

day = "2",

doi = "10.1016/j.jcrysgro.2005.12.016",

language = "English (US)",

volume = "288",

pages = "12--17",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

AU - Jiang, De Sheng

AU - Qu, Yu Hua

AU - Ni, Hai Qiao

AU - Wu, Donghai

AU - Xu, Ying Qiang

AU - Niu, Zhi Chuan

N1 - Funding Information: This work was partly supported by the National Natural Science Foundation of China with Grant no. 60276003.

PY - 2006/2/2

Y1 - 2006/2/2

N2 - It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 μm with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 °C with a short duration of 10 s is suggested for optimizing the annealing effect.

AB - It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 μm with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 °C with a short duration of 10 s is suggested for optimizing the annealing effect.

KW - A3. Molecular beam epitaxy

KW - A3. Quantum wells

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=31644445011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31644445011&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.12.016

DO - 10.1016/j.jcrysgro.2005.12.016

M3 - Conference article

AN - SCOPUS:31644445011

SN - 0022-0248

VL - 288

SP - 12

EP - 17

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - International Conference on Materials for Advanced Technologies

Y2 - 4 July 2005 through 8 July 2005

ER -

Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this