Optical properties of laterally aligned Si nanowires for transparent electronics applications

Dong Hyun Lee; Jaeseok Yi; Won Woo Lee; Ungyu Paik; John A. Rogers; Won Il Park

doi:10.1007/s12274-011-0138-5

Optical properties of laterally aligned Si nanowires for transparent electronics applications

Dong Hyun Lee, Jaeseok Yi, Won Woo Lee, Ungyu Paik, John A. Rogers, Won Il Park

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20-25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

Original language	English (US)
Pages (from-to)	817-823
Number of pages	7
Journal	Nano Research
Volume	4
Issue number	9
DOIs	https://doi.org/10.1007/s12274-011-0138-5
State	Published - Sep 2011

Keywords

Si nanowire
finite-difference time-domain (FDTD) modeling
optical properties
transparent thin film transistor

ASJC Scopus subject areas

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
General Materials Science
Electrical and Electronic Engineering

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10.1007/s12274-011-0138-5

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title = "Optical properties of laterally aligned Si nanowires for transparent electronics applications",

abstract = "We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20-25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.",

keywords = "Si nanowire, finite-difference time-domain (FDTD) modeling, optical properties, transparent thin film transistor",

author = "Lee, {Dong Hyun} and Jaeseok Yi and Lee, {Won Woo} and Ungyu Paik and Rogers, {John A.} and Park, {Won Il}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (No. KRF-2007-331-D00194) and by the National Research Foundation of Korea (NRF) through a Grant (No. K2070400000307, Global Research Laboratory (GRL) Program) provided by the Korean Ministry of Education, Science and Technology (MEST) in 2009.",

year = "2011",

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doi = "10.1007/s12274-011-0138-5",

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AU - Lee, Dong Hyun

AU - Yi, Jaeseok

AU - Lee, Won Woo

AU - Paik, Ungyu

AU - Rogers, John A.

AU - Park, Won Il

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (No. KRF-2007-331-D00194) and by the National Research Foundation of Korea (NRF) through a Grant (No. K2070400000307, Global Research Laboratory (GRL) Program) provided by the Korean Ministry of Education, Science and Technology (MEST) in 2009.

PY - 2011/9

Y1 - 2011/9

N2 - We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20-25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

AB - We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20-25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

KW - Si nanowire

KW - finite-difference time-domain (FDTD) modeling

KW - optical properties

KW - transparent thin film transistor

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JO - Nano Research

JF - Nano Research

IS - 9

ER -

Optical properties of laterally aligned Si nanowires for transparent electronics applications

Abstract

Keywords

ASJC Scopus subject areas

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