Optical properties of laterally aligned Si nanowires for transparent electronics applications

Dong Hyun Lee, Jaeseok Yi, Won Woo Lee, Ungyu Paik, John A. Rogers, Won Il Park

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20-25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

Original languageEnglish (US)
Pages (from-to)817-823
Number of pages7
JournalNano Research
Volume4
Issue number9
DOIs
StatePublished - Sep 2011

Keywords

  • Si nanowire
  • finite-difference time-domain (FDTD) modeling
  • optical properties
  • transparent thin film transistor

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Optical properties of laterally aligned Si nanowires for transparent electronics applications'. Together they form a unique fingerprint.

Cite this