Optical properties of the deep Mn acceptor in GaN:Mn

R. Y. Korotkov, J. M. Gregie, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

161 Scopus citations

Abstract

The optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-temperature optical absorption measurements indicate the presence of a Mn-related band with a well-resolved fine structure. The zero-phonon line is at 1.418±0.002 eV with a full width at half maximum of 20±1 meV. Two pseudolocal vibrational modes associated with manganese were observed with energies of hv1=20 and hv2=73 meV. Deep-level optical spectroscopy measurements on lightly Mn-doped samples indicate that Mn forms a deep acceptor level at Ev+1.42 eV. Using the vacuum referred binding energy model for transition metals and the measured Mn energy level, the electron affinity of GaN is calculated to be 3.4 eV, which agrees well with experimental values.

Original languageEnglish (US)
Pages (from-to)1731-1733
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number10
DOIs
StatePublished - Mar 11 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Optical properties of the deep Mn acceptor in GaN:Mn'. Together they form a unique fingerprint.

Cite this