Optical spectral holeburning with Raman coherent population trapping

P. R. Hemmer*, M. S. Shahriar, B. S. Ham, M. K. Kim, Yu Rozhdestvensky

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Optical spectral holeburning is examined for the case when two-frequency Raman resonant laser excitation is used in place of conventional single frequency excitation. It is found that Raman coherent population trapping can be used to increase storage capacity beyond the limit given by the ratio of optical inhomogeneous to homogeneous linewidths. This is possible because Raman population trapping provides an additional storage dimension. Theoretical analysis and practical issues are presented.

Original languageEnglish (US)
Pages (from-to)287-294
Number of pages8
JournalMolecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals
Volume291
DOIs
StatePublished - 1996

Funding

ACKNOWLEDGMENTS We wish to acknowledge enlightening discussions with Prof. S. Ezekiel of the Massachusetts Institute of Technology. This work was supported by Rome Laboratory (in-house task 2305D711 and contract F19628-89-K-0030), and also in part, by the National Science Foundation under grant ECS-9023746 and in part by a grant of HPC time from the DoD HPC center, CEWES, Cray 0 0 .

ASJC Scopus subject areas

  • Condensed Matter Physics

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