OPTICAL STUDIES OF GaInAs/InP QUANTUM WELLS.

M. Razeghi; J. Nagle; C. Weisbuch

OPTICAL STUDIES OF GaInAs/InP QUANTUM WELLS.

M. Razeghi^*, J. Nagle, C. Weisbuch

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

The highly-efficient photoluminescence of GaInAs/InP quantum wells grown by low-pressure MOCVD has been investigated. Narrow lines are observed down to nominal thicknesses of approx. 8 A. Various excited states of quantum wells have been measured by photoluminescence excitation spectroscopy, allowing a preliminary determination of the band-gap offsets at the GaInAs-InP interface. Carrier capture is shown to be extremely efficient even for the narrowest wells studied.

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Editors	B. de Cremoux
Pages	379-384
Number of pages	6
Edition	74
State	Published - Dec 1 1985

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "OPTICAL STUDIES OF GaInAs/InP QUANTUM WELLS.",

abstract = "The highly-efficient photoluminescence of GaInAs/InP quantum wells grown by low-pressure MOCVD has been investigated. Narrow lines are observed down to nominal thicknesses of approx. 8 A. Various excited states of quantum wells have been measured by photoluminescence excitation spectroscopy, allowing a preliminary determination of the band-gap offsets at the GaInAs-InP interface. Carrier capture is shown to be extremely efficient even for the narrowest wells studied.",

author = "M. Razeghi and J. Nagle and C. Weisbuch",

year = "1985",

month = dec,

day = "1",

language = "English (US)",

isbn = "0854981659",

pages = "379--384",

editor = "{de Cremoux}, B.",

booktitle = "Institute of Physics Conference Series",

edition = "74",

}

TY - GEN

T1 - OPTICAL STUDIES OF GaInAs/InP QUANTUM WELLS.

AU - Razeghi, M.

AU - Nagle, J.

AU - Weisbuch, C.

PY - 1985/12/1

Y1 - 1985/12/1

N2 - The highly-efficient photoluminescence of GaInAs/InP quantum wells grown by low-pressure MOCVD has been investigated. Narrow lines are observed down to nominal thicknesses of approx. 8 A. Various excited states of quantum wells have been measured by photoluminescence excitation spectroscopy, allowing a preliminary determination of the band-gap offsets at the GaInAs-InP interface. Carrier capture is shown to be extremely efficient even for the narrowest wells studied.

AB - The highly-efficient photoluminescence of GaInAs/InP quantum wells grown by low-pressure MOCVD has been investigated. Narrow lines are observed down to nominal thicknesses of approx. 8 A. Various excited states of quantum wells have been measured by photoluminescence excitation spectroscopy, allowing a preliminary determination of the band-gap offsets at the GaInAs-InP interface. Carrier capture is shown to be extremely efficient even for the narrowest wells studied.

UR - http://www.scopus.com/inward/record.url?scp=0022232607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022232607&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022232607

SN - 0854981659

SP - 379

EP - 384

BT - Institute of Physics Conference Series

A2 - de Cremoux, B.

ER -

OPTICAL STUDIES OF GaInAs/InP QUANTUM WELLS.

Abstract

ASJC Scopus subject areas

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