The highly-efficient photoluminescence of GaInAs/InP quantum wells grown by low-pressure MOCVD has been investigated. Narrow lines are observed down to nominal thicknesses of approx. 8 A. Various excited states of quantum wells have been measured by photoluminescence excitation spectroscopy, allowing a preliminary determination of the band-gap offsets at the GaInAs-InP interface. Carrier capture is shown to be extremely efficient even for the narrowest wells studied.
|Original language||English (US)|
|Title of host publication||Institute of Physics Conference Series|
|Editors||B. de Cremoux|
|Number of pages||6|
|State||Published - Dec 1 1985|
ASJC Scopus subject areas
- Physics and Astronomy(all)