OPTICAL STUDIES OF GaInAs/InP QUANTUM WELLS.

M. Razeghi*, J. Nagle, C. Weisbuch

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

The highly-efficient photoluminescence of GaInAs/InP quantum wells grown by low-pressure MOCVD has been investigated. Narrow lines are observed down to nominal thicknesses of approx. 8 A. Various excited states of quantum wells have been measured by photoluminescence excitation spectroscopy, allowing a preliminary determination of the band-gap offsets at the GaInAs-InP interface. Carrier capture is shown to be extremely efficient even for the narrowest wells studied.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages379-384
Number of pages6
Edition74
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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