Optical study of GaN doped with Mn grown by metal organic vapor phase epitaxy

R. Y. Korotkov*, J. M. Gregie, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

13 Scopus citations

Abstract

The optical properties of Mn-doped GaN were investigated. The films were grown by metalorganic vapor phase epitaxy using tricarbonyl (methylcyclopentadienyl) manganese as the dopant source. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers. The low energy band had a threshold at 1.4 ± 0.05 eV with a maximum at 1.5 ± 0.02 eV, with a full width half maximum of 245 ± 10 meV at 296 K. A second higher energy band was observed as a shoulder to the band edge absorption with a threshold energy of 2.06 eV at room temperature. Using photoluminescence spectroscopy, a new broad band was observed in the infrared spectra of GaN:Mn at 1.27 ± 0.02 eV with a full width half maximum of 0.26 ± 0.01 eV at 20K. From analysis of optical absorption and emission spectra Mn forms a deep acceptor level with optical transitions at 1.4 and 2.06 eV. The deep level nature of Mn indicates that it is a potential dopant for semi-insulating GaN.

Original languageEnglish (US)
Pages (from-to)G3.7.1-G3.7.6
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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