TY - JOUR
T1 - Optical study of GaN
T2 - Mn co-doped with Mg grown by metal organic vapor phase epitaxy
AU - Korotkov, R. Y.
AU - Gregie, J. M.
AU - Han, B.
AU - Wessels, B. W.
N1 - Funding Information:
This work was supported by the Office of Naval Research under grant N00014-01-0012.
PY - 2001/12
Y1 - 2001/12
N2 - Optical properties of a series of semi-insulating Mn-doped GaN co-doped with Mg were studied using photoluminescence (PL). A strong PL emission band at 1.0eV was observed upon co-doping. The new band exhibited a rich fine structure with peaks at 1.057, 1.048, 1.035, 1.032, 1.020, 1.014, 1.008, 1.000 and 0.988±0.001eV. The integrated and relative intensities of these lines varied as a function of the Mn concentration and excitation source. The measured luminescence decay time was 20-95μs and depended on emission energy.
AB - Optical properties of a series of semi-insulating Mn-doped GaN co-doped with Mg were studied using photoluminescence (PL). A strong PL emission band at 1.0eV was observed upon co-doping. The new band exhibited a rich fine structure with peaks at 1.057, 1.048, 1.035, 1.032, 1.020, 1.014, 1.008, 1.000 and 0.988±0.001eV. The integrated and relative intensities of these lines varied as a function of the Mn concentration and excitation source. The measured luminescence decay time was 20-95μs and depended on emission energy.
KW - GaN
KW - Mn doping
KW - Photoluminescence
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U2 - 10.1016/S0921-4526(01)00654-8
DO - 10.1016/S0921-4526(01)00654-8
M3 - Article
AN - SCOPUS:0012492584
SN - 0921-4526
VL - 308-310
SP - 18
EP - 21
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -