Optical study of GaN: Mn co-doped with Mg grown by metal organic vapor phase epitaxy

R. Y. Korotkov, J. M. Gregie, B. Han, B. W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Optical properties of a series of semi-insulating Mn-doped GaN co-doped with Mg were studied using photoluminescence (PL). A strong PL emission band at 1.0eV was observed upon co-doping. The new band exhibited a rich fine structure with peaks at 1.057, 1.048, 1.035, 1.032, 1.020, 1.014, 1.008, 1.000 and 0.988±0.001eV. The integrated and relative intensities of these lines varied as a function of the Mn concentration and excitation source. The measured luminescence decay time was 20-95μs and depended on emission energy.

Original languageEnglish (US)
Pages (from-to)18-21
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
StatePublished - Dec 2001

Keywords

  • GaN
  • Mn doping
  • Photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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