Abstract
Optical properties of a series of semi-insulating Mn-doped GaN co-doped with Mg were studied using photoluminescence (PL). A strong PL emission band at 1.0eV was observed upon co-doping. The new band exhibited a rich fine structure with peaks at 1.057, 1.048, 1.035, 1.032, 1.020, 1.014, 1.008, 1.000 and 0.988±0.001eV. The integrated and relative intensities of these lines varied as a function of the Mn concentration and excitation source. The measured luminescence decay time was 20-95μs and depended on emission energy.
Original language | English (US) |
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Pages (from-to) | 18-21 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 308-310 |
DOIs | |
State | Published - Dec 2001 |
Keywords
- GaN
- Mn doping
- Photoluminescence
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering