Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

F. Herzog; M. Bichler; G. Koblmüller; S. Prabhu-Gaunkar; W. Zhou; M. Grayson

doi:10.1063/1.4711783

Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

F. Herzog, M. Bichler, G. Koblmüller^*, S. Prabhu-Gaunkar, W. Zhou, M. Grayson

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures T _G > 690 °C and low As ₄ fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic force and transmission electron microscopy as well as x-ray diffraction. Mirror-smooth and defect-free AlAs with pronounced step-flow morphology was further achieved by growth on 2° misoriented GaAs (111)B toward [0 1 1] and [2 1 1 ] orientations. Successful fabrication of modulation-doped AlAs QW structures on these misoriented substrates yielded record electron mobilities (at 1.15 K) in excess of 13 000 cm ²/Vs at sheet carrier densities of 5 × 10 ¹¹cm ^-2.

Original language	English (US)
Article number	192106
Journal	Applied Physics Letters
Volume	100
Issue number	19
DOIs	https://doi.org/10.1063/1.4711783
State	Published - May 7 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{56f41ec1e5f04184abdef590141f5406,

title = "Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B",

abstract = "We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures T G > 690 °C and low As 4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic force and transmission electron microscopy as well as x-ray diffraction. Mirror-smooth and defect-free AlAs with pronounced step-flow morphology was further achieved by growth on 2° misoriented GaAs (111)B toward [0 1 1] and [2 1 1 ] orientations. Successful fabrication of modulation-doped AlAs QW structures on these misoriented substrates yielded record electron mobilities (at 1.15 K) in excess of 13 000 cm 2/Vs at sheet carrier densities of 5 × 10 11cm -2.",

author = "F. Herzog and M. Bichler and G. Koblm{\"u}ller and S. Prabhu-Gaunkar and W. Zhou and M. Grayson",

note = "Funding Information: This work was supported by NSF grant DMR-0748856, the NSF MRSEC program DMR-0520513 and DMR-1121262 at the Materials Research Center of Northwestern University, with work conducted at the Electron Probe Instrumentation Center (EPIC) of Prof. Dravid and the J. B. Cohen X-ray Diffraction Facility of Prof. Bedzyk at Northwestern University. The authors thank Jinsong Wu, Shu-You Li, and J. Carsello for assistance with TEM and XRD measurements (Materials Science and Engineering, NU) as well as J. Becker, K. Chen, and S. Bolte for help with AFM and transport measurements (WSI-TUM). ",

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doi = "10.1063/1.4711783",

language = "English (US)",

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AU - Herzog, F.

AU - Bichler, M.

AU - Koblmüller, G.

AU - Prabhu-Gaunkar, S.

AU - Zhou, W.

AU - Grayson, M.

N1 - Funding Information: This work was supported by NSF grant DMR-0748856, the NSF MRSEC program DMR-0520513 and DMR-1121262 at the Materials Research Center of Northwestern University, with work conducted at the Electron Probe Instrumentation Center (EPIC) of Prof. Dravid and the J. B. Cohen X-ray Diffraction Facility of Prof. Bedzyk at Northwestern University. The authors thank Jinsong Wu, Shu-You Li, and J. Carsello for assistance with TEM and XRD measurements (Materials Science and Engineering, NU) as well as J. Becker, K. Chen, and S. Bolte for help with AFM and transport measurements (WSI-TUM).

PY - 2012/5/7

Y1 - 2012/5/7

N2 - We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures T G > 690 °C and low As 4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic force and transmission electron microscopy as well as x-ray diffraction. Mirror-smooth and defect-free AlAs with pronounced step-flow morphology was further achieved by growth on 2° misoriented GaAs (111)B toward [0 1 1] and [2 1 1 ] orientations. Successful fabrication of modulation-doped AlAs QW structures on these misoriented substrates yielded record electron mobilities (at 1.15 K) in excess of 13 000 cm 2/Vs at sheet carrier densities of 5 × 10 11cm -2.

AB - We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures T G > 690 °C and low As 4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic force and transmission electron microscopy as well as x-ray diffraction. Mirror-smooth and defect-free AlAs with pronounced step-flow morphology was further achieved by growth on 2° misoriented GaAs (111)B toward [0 1 1] and [2 1 1 ] orientations. Successful fabrication of modulation-doped AlAs QW structures on these misoriented substrates yielded record electron mobilities (at 1.15 K) in excess of 13 000 cm 2/Vs at sheet carrier densities of 5 × 10 11cm -2.

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Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

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