Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy

H. Q. Ni*, Z. C. Niu, Z. D. Fang, S. S. Huang, S. Y. Zhang, Donghai Wu, Z. Shun, Q. Han, R. H. Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 μ m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 μ m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated.

Original languageEnglish (US)
Pages (from-to)125-128
Number of pages4
JournalJournal of Crystal Growth
Volume301-302
Issue numberSPEC. ISS.
DOIs
StatePublished - Apr 2007

Keywords

  • A3. Quantum wells
  • B3. Laser

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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