Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy

H. Q. Ni; Z. C. Niu; Z. D. Fang; S. S. Huang; S. Y. Zhang; Donghai Wu; Z. Shun; Q. Han; R. H. Wu

doi:10.1016/j.jcrysgro.2006.11.172

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy

H. Q. Ni^*, Z. C. Niu, Z. D. Fang, S. S. Huang, S. Y. Zhang, Donghai Wu, Z. Shun, Q. Han, R. H. Wu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 μ m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 μ m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated.

Original language	English (US)
Pages (from-to)	125-128
Number of pages	4
Journal	Journal of Crystal Growth
Volume	301-302
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.172
State	Published - Apr 2007

Funding

This work was partly supported by the National Natural Science Foundation of China (Grant nos. 90201026, 60137020), the National High Technology Research and Development Program, the Special Funds for Major State Basic Research Project and Post-doctoral Science Foundation of China.

Keywords

A3. Quantum wells
B3. Laser

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.11.172

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title = "Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy",

abstract = "The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 μ m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 μ m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated.",

keywords = "A3. Quantum wells, B3. Laser",

author = "Ni, {H. Q.} and Niu, {Z. C.} and Fang, {Z. D.} and Huang, {S. S.} and Zhang, {S. Y.} and Donghai Wu and Z. Shun and Q. Han and Wu, {R. H.}",

note = "Funding Information: This work was partly supported by the National Natural Science Foundation of China (Grant nos. 90201026, 60137020), the National High Technology Research and Development Program, the Special Funds for Major State Basic Research Project and Post-doctoral Science Foundation of China. ",

year = "2007",

month = apr,

doi = "10.1016/j.jcrysgro.2006.11.172",

language = "English (US)",

volume = "301-302",

pages = "125--128",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "SPEC. ISS.",

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TY - JOUR

T1 - Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy

AU - Ni, H. Q.

AU - Niu, Z. C.

AU - Fang, Z. D.

AU - Huang, S. S.

AU - Zhang, S. Y.

AU - Wu, Donghai

AU - Shun, Z.

AU - Han, Q.

AU - Wu, R. H.

N1 - Funding Information: This work was partly supported by the National Natural Science Foundation of China (Grant nos. 90201026, 60137020), the National High Technology Research and Development Program, the Special Funds for Major State Basic Research Project and Post-doctoral Science Foundation of China.

PY - 2007/4

Y1 - 2007/4

N2 - The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 μ m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 μ m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated.

AB - The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 μ m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 μ m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated.

KW - A3. Quantum wells

KW - B3. Laser

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U2 - 10.1016/j.jcrysgro.2006.11.172

DO - 10.1016/j.jcrysgro.2006.11.172

M3 - Article

AN - SCOPUS:33947319953

SN - 0022-0248

VL - 301-302

SP - 125

EP - 128

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS.

ER -

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μ m grown by molecular beam epitaxy

Abstract

Funding

Keywords

ASJC Scopus subject areas

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