INIS
optimization
100%
molecular beam epitaxy
100%
quantum wells
100%
gallium arsenides
100%
strains
66%
wavelengths
66%
radiowave radiation
66%
lasers
33%
growth
33%
barriers
33%
power
33%
ions
33%
temperature range 0273-0400 k
33%
relaxation
33%
damage
33%
operation
33%
flow rate
33%
segregation
33%
Physics
Molecular Beam Epitaxy
100%
Quantum Wells
100%
Optimization
100%
Frequencies
100%
Flow Velocity
50%
Room Temperature
50%
Continuous Radiation
50%
Ion
50%
Energetics
50%
Lasing
50%
Quality
50%
Growth
50%
Independent Variables
50%
Laser
50%
Temperature
50%
Engineering
Optimization
100%
Radio Frequency
100%
Wavelength
100%
Flow Rate
50%
Continuous Wave
50%
Room Temperature
50%
Emitting Laser
50%
Growth Temperature
50%
Strain Relaxation
50%
Operation Mode
50%
Phase Segregation
50%
Energetics
50%
Material Science
Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
Quantum Well
100%
Strain
100%
Temperature
100%
Laser
50%