Optimization of InGaAsP/GaAs laser diode processing for high-power operation

J. Diaz*, I. Eliashevich, H. Yi, L. Wang, M. Razeghi

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Recently, the cavity length dependence of operational characteristics of InGaAs/GaAs 0.8 μm SCH laser diodes was studied and that long-cavity lasers may be advantageous for high-power operation because they are less subjected to the effects of excess carrier leakage from the active region to the waveguide and cladding layers was argued. Low series resistance and thermal resistance of long-cavity laser diodes and bars suggest an additional incentive for their use for high-power CW application.

Original languageEnglish (US)
Pages413-414
Number of pages2
StatePublished - Dec 1 1994
EventProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) - Boston, MA, USA
Duration: Oct 31 1994Nov 3 1994

Other

OtherProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)
CityBoston, MA, USA
Period10/31/9411/3/94

ASJC Scopus subject areas

  • Engineering(all)

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