Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

Bing Peng Wu, Donghai Wu*, Hai Qiao Ni, She Song Huang, Feng Zhan, Yong Hua Xiong, Ying Qiang Xu, Zhi Chuan Niu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We investigate the molecular beam epitaxy growth of metamorphic In xGa1-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.

Original languageEnglish (US)
Pages (from-to)3543-3546
Number of pages4
JournalChinese Physics Letters
Volume24
Issue number12
DOIs
StatePublished - Dec 1 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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