Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

Bing Peng Wu; Donghai Wu; Hai Qiao Ni; She Song Huang; Feng Zhan; Yong Hua Xiong; Ying Qiang Xu; Zhi Chuan Niu

doi:10.1088/0256-307X/24/12/069

Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

Bing Peng Wu, Donghai Wu^*, Hai Qiao Ni, She Song Huang, Feng Zhan, Yong Hua Xiong, Ying Qiang Xu, Zhi Chuan Niu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We investigate the molecular beam epitaxy growth of metamorphic In _xGa_1-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.

Original language	English (US)
Pages (from-to)	3543-3546
Number of pages	4
Journal	Chinese Physics Letters
Volume	24
Issue number	12
DOIs	https://doi.org/10.1088/0256-307X/24/12/069
State	Published - Dec 1 2007

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/0256-307X/24/12/069

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@article{ad2e998654364f56a870170381fde73a,

title = "Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy",

abstract = "We investigate the molecular beam epitaxy growth of metamorphic In xGa1-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.",

author = "Wu, {Bing Peng} and Donghai Wu and Ni, {Hai Qiao} and Huang, {She Song} and Feng Zhan and Xiong, {Yong Hua} and Xu, {Ying Qiang} and Niu, {Zhi Chuan}",

year = "2007",

month = dec,

day = "1",

doi = "10.1088/0256-307X/24/12/069",

language = "English (US)",

volume = "24",

pages = "3543--3546",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "12",

}

TY - JOUR

T1 - Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

AU - Wu, Bing Peng

AU - Wu, Donghai

AU - Ni, Hai Qiao

AU - Huang, She Song

AU - Zhan, Feng

AU - Xiong, Yong Hua

AU - Xu, Ying Qiang

AU - Niu, Zhi Chuan

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We investigate the molecular beam epitaxy growth of metamorphic In xGa1-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.

AB - We investigate the molecular beam epitaxy growth of metamorphic In xGa1-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.

UR - http://www.scopus.com/inward/record.url?scp=37249044122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37249044122&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/24/12/069

DO - 10.1088/0256-307X/24/12/069

M3 - Article

AN - SCOPUS:37249044122

SN - 0256-307X

VL - 24

SP - 3543

EP - 3546

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 12

ER -

Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

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