Optimized structure for InGaAsP/GaAs 808 nm high power lasers

H. J. Yi*, J. Diaz, L. J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The optimized structure for the InGaAsP/GaAs quaternary material lasers (λ=0.808 μm) is investigated for the most efficient high-power operation through an experiment and theoretical study. A comparative study is performed of threshold current density Jth and differential efficiency ηd dependence on cavity length (L) for two different laser structures with different active layer thickness (150 and 300 Å) as well as for laser structures with different multiple quantum well structures. A theoretical model with a more accurate formulation for minority leakage phenomenon provides explanation for the experimental results and sets general optimization rules for other lasers with similar restrictions on the band gap and refractive index difference between the active layer and the cladding layers.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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