TY - BOOK
T1 - Optoelectronic Devices
T2 - III Nitrides
AU - Razeghi, M.
AU - Henini, M.
N1 - Publisher Copyright:
© 2005 Elsevier Ltd. All rights reserved.
PY - 2005/1/1
Y1 - 2005/1/1
N2 - Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
AB - Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
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U2 - 10.1016/B978-0-08-044426-0.X5000-7
DO - 10.1016/B978-0-08-044426-0.X5000-7
M3 - Book
AN - SCOPUS:85148816323
BT - Optoelectronic Devices
PB - Elsevier
ER -