Ordered stacking fault arrays in silicon nanowires

J. Lopez Francisco, R. Hemesath Eric, Lincoln J. Lauhon

Research output: Contribution to journalArticlepeer-review

98 Scopus citations


Correlated Raman microscopy and transmission electron microscopy were used to study the ordering of {111} planar defects in individual silicon nanowires. Detailed electron diffraction and polarization-dependent Raman analysis of individual nanowires enabled assessments of the stacking fault distribution, which varied from random to periodic, with the latter giving rise to local domains of 2H and 9R polytypes rather than the 3C diamond cubic structure. Some controversies and inconsistencies concerning earlier reports of polytypes in Si nanowires were resolved.

Original languageEnglish (US)
Pages (from-to)2774-2779
Number of pages6
JournalNano letters
Issue number7
StatePublished - Jul 8 2009

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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