Organic electro-optic modulator using transparent conducting oxides as electrodes

Guoyang Xu; Zhifu Liu; Jing Ma; Boyang Liu; Seng Tiong Ho; Lian Wang; Peiwang Zhu; Tobin J. Marks; Jingdong Luo; Alex K.Y. Jen

doi:10.1364/OPEX.13.007380

Organic electro-optic modulator using transparent conducting oxides as electrodes

Guoyang Xu^*, Zhifu Liu, Jing Ma, Boyang Liu, Seng Tiong Ho, Lian Wang, Peiwang Zhu, Tobin J. Marks, Jingdong Luo, Alex K.Y. Jen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

A novel organic electro-optic (EO) modulator using transparent conducting oxides (ZnO and In₂O₃) as electrodes is demonstrated for the first time. The modulator employs the poled guest-host chromophore/polymer material AJL8/APC having r₃₃=35pm/V and is able to achieve a low V_π=2.8 V switching voltage for an 8mm-long device at a wavelength of 1.31μm. This corresponds to a V_π=1.1 V switching voltage for a 1cm-long device in a push-pull configuration. The push-pull V _πL figure of merit normalized for the EO coefficient is thus 1.1V-cm/(35 pm/V), which is 3-4x lower than that can be achieved with a convetional modulator structure. The bottom electrode is ZnO grown by Metal-Organic Vapor Deposition (MOCVD) and top electrode In₂O ₃ deposited using ion-beam assisted deposition. The top electrode is directly deposited on the guest-host organic material. The design and fabrication considerations for the modulator are also discussed.

Original language	English (US)
Pages (from-to)	7380-7385
Number of pages	6
Journal	Optics Express
Volume	13
Issue number	19
DOIs	https://doi.org/10.1364/OPEX.13.007380
State	Published - Sep 19 2005

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1364/OPEX.13.007380

Cite this

@article{350674d145714aeb818c42babf938850,

title = "Organic electro-optic modulator using transparent conducting oxides as electrodes",

abstract = "A novel organic electro-optic (EO) modulator using transparent conducting oxides (ZnO and In2O3) as electrodes is demonstrated for the first time. The modulator employs the poled guest-host chromophore/polymer material AJL8/APC having r33=35pm/V and is able to achieve a low Vπ=2.8 V switching voltage for an 8mm-long device at a wavelength of 1.31μm. This corresponds to a Vπ=1.1 V switching voltage for a 1cm-long device in a push-pull configuration. The push-pull V πL figure of merit normalized for the EO coefficient is thus 1.1V-cm/(35 pm/V), which is 3-4x lower than that can be achieved with a convetional modulator structure. The bottom electrode is ZnO grown by Metal-Organic Vapor Deposition (MOCVD) and top electrode In2O 3 deposited using ion-beam assisted deposition. The top electrode is directly deposited on the guest-host organic material. The design and fabrication considerations for the modulator are also discussed.",

author = "Guoyang Xu and Zhifu Liu and Jing Ma and Boyang Liu and Ho, {Seng Tiong} and Lian Wang and Peiwang Zhu and Marks, {Tobin J.} and Jingdong Luo and Jen, {Alex K.Y.}",

year = "2005",

month = sep,

day = "19",

doi = "10.1364/OPEX.13.007380",

language = "English (US)",

volume = "13",

pages = "7380--7385",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group (formerly OSA)",

number = "19",

}

TY - JOUR

T1 - Organic electro-optic modulator using transparent conducting oxides as electrodes

AU - Xu, Guoyang

AU - Liu, Zhifu

AU - Ma, Jing

AU - Liu, Boyang

AU - Ho, Seng Tiong

AU - Wang, Lian

AU - Zhu, Peiwang

AU - Marks, Tobin J.

AU - Luo, Jingdong

AU - Jen, Alex K.Y.

PY - 2005/9/19

Y1 - 2005/9/19

N2 - A novel organic electro-optic (EO) modulator using transparent conducting oxides (ZnO and In2O3) as electrodes is demonstrated for the first time. The modulator employs the poled guest-host chromophore/polymer material AJL8/APC having r33=35pm/V and is able to achieve a low Vπ=2.8 V switching voltage for an 8mm-long device at a wavelength of 1.31μm. This corresponds to a Vπ=1.1 V switching voltage for a 1cm-long device in a push-pull configuration. The push-pull V πL figure of merit normalized for the EO coefficient is thus 1.1V-cm/(35 pm/V), which is 3-4x lower than that can be achieved with a convetional modulator structure. The bottom electrode is ZnO grown by Metal-Organic Vapor Deposition (MOCVD) and top electrode In2O 3 deposited using ion-beam assisted deposition. The top electrode is directly deposited on the guest-host organic material. The design and fabrication considerations for the modulator are also discussed.

AB - A novel organic electro-optic (EO) modulator using transparent conducting oxides (ZnO and In2O3) as electrodes is demonstrated for the first time. The modulator employs the poled guest-host chromophore/polymer material AJL8/APC having r33=35pm/V and is able to achieve a low Vπ=2.8 V switching voltage for an 8mm-long device at a wavelength of 1.31μm. This corresponds to a Vπ=1.1 V switching voltage for a 1cm-long device in a push-pull configuration. The push-pull V πL figure of merit normalized for the EO coefficient is thus 1.1V-cm/(35 pm/V), which is 3-4x lower than that can be achieved with a convetional modulator structure. The bottom electrode is ZnO grown by Metal-Organic Vapor Deposition (MOCVD) and top electrode In2O 3 deposited using ion-beam assisted deposition. The top electrode is directly deposited on the guest-host organic material. The design and fabrication considerations for the modulator are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=25144519353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25144519353&partnerID=8YFLogxK

U2 - 10.1364/OPEX.13.007380

DO - 10.1364/OPEX.13.007380

M3 - Article

C2 - 19498761

AN - SCOPUS:25144519353

SN - 1094-4087

VL - 13

SP - 7380

EP - 7385

JO - Optics Express

JF - Optics Express

IS - 19

ER -

Organic electro-optic modulator using transparent conducting oxides as electrodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this