Organic light-emitting diodes with field-effect-assisted electron transport based on α,ω-diperfluorohexyl-quaterthiophene

Sarah Schols*, Christina McClatchey, Cédric Rolin, Dieter Bode, Jan Genoe, Paul Heremans, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Materials commonly used in the carrier transport layers of organic light-emitting diodes, where transport occurs through the bulk, are in general very different from materials used in organic field-effect transistors, where transport takes place in a very thin accumulation channel. In this paper, the use of a high-performance electron-conducting field-effect transistor material, diperfluorohexyl-substituted quaterthiophene (DFH-4T), as the electron-transporting material in an organic light-emitting diode structure is investigated. The organic light-emitting diode has an electron accumulation layer in DFH-4T at the organic hetero-interface with the host of the light-emitting layer, tris(8-hydroxyquinoline) aluminum (Alq3). This electron accumulation layer is used to transport electrons and inject them into the active emissive host-guest layer. By optimizing the growth conditions of DFH-4T for electron transport at the organic hetero-interface, high electron current densities of 750 A cm-2 are achieved in this innovative light-emitting structure.

Original languageEnglish (US)
Pages (from-to)3645-3652
Number of pages8
JournalAdvanced Functional Materials
Issue number22
StatePublished - Nov 24 2008

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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