INIS
films
100%
organometallic compounds
60%
chemical vapor deposition
60%
deposition
40%
gases
40%
carriers
40%
argon
40%
surfaces
20%
water
20%
orientation
20%
substrates
20%
precursor
20%
oxygen
20%
diffusion
20%
volatility
20%
vapors
20%
superconductivity
20%
atmospheric pressure
20%
annealing
20%
thallium
20%
water vapor
20%
zirconium
20%
copper oxides
20%
yttrium oxides
20%
high-tc superconductors
20%
Chemistry
Liquid Film
100%
Metallocene
60%
Gas
40%
Pressure
40%
Diffusion
20%
Dioxygen
20%
Superconductor
20%
Superconductivity
20%
Thallium
20%
Copper(II) Oxide
20%
Acetylacetonate
20%
Cyclopentadienide
20%
Rapid Thermal Annealing
20%
Surface
20%
Water Type
20%
Resistance
20%
Material Science
Liquid Films
100%
Argon
40%
Gas
40%
Superconducting Material
20%
Yttria Stabilized Zirconia
20%
Surface
20%
Vapor
20%
Water Vapor
20%