Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction

M. Lu*, D. M. Tennant, C. J. Jacobsen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub- 50-nm scale in Gaussian e-beam lithography. The authors' analysis shows that this orientation dependence of linewidth variation originates from the nonuniformity of discrete primitive filling in Cartesian coordinates. Two correction schemes based on pattern segmentation are proposed. Test exposures of high resolution zone plate patterns show that both two schemes work well; a double-insert scheme is superior in terms of dose distribution uniformity.

Original languageEnglish (US)
Pages (from-to)2881-2885
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number6
DOIs
StatePublished - Dec 11 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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