Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction

M. Lu; D. M. Tennant; C. J. Jacobsen

doi:10.1116/1.2393292

Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction

M. Lu^*, D. M. Tennant, C. J. Jacobsen

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub- 50-nm scale in Gaussian e-beam lithography. The authors' analysis shows that this orientation dependence of linewidth variation originates from the nonuniformity of discrete primitive filling in Cartesian coordinates. Two correction schemes based on pattern segmentation are proposed. Test exposures of high resolution zone plate patterns show that both two schemes work well; a double-insert scheme is superior in terms of dose distribution uniformity.

Original language	English (US)
Pages (from-to)	2881-2885
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	6
DOIs	https://doi.org/10.1116/1.2393292
State	Published - 2006

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.2393292

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@article{0403d532bc8d439a9811bf7fb023806e,

title = "Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction",

abstract = "The width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub- 50-nm scale in Gaussian e-beam lithography. The authors' analysis shows that this orientation dependence of linewidth variation originates from the nonuniformity of discrete primitive filling in Cartesian coordinates. Two correction schemes based on pattern segmentation are proposed. Test exposures of high resolution zone plate patterns show that both two schemes work well; a double-insert scheme is superior in terms of dose distribution uniformity.",

author = "M. Lu and Tennant, {D. M.} and Jacobsen, {C. J.}",

note = "Funding Information: The authors gratefully acknowledge Steve Spector of MIT Lincoln Laboratory, Aaron Stein of Brookhaven National Laboratory and Xiaojing Huang of SUNY at Stony Brook for their early contribution to our zone plate generation software, and Hirofumi Ohki of JEOL for helpful information on JBX-9300FS system. The research was partially supported by the National Science Foundation under Grant No. ECS-0099893 and by the U.S. Department of Energy, through the user proposal of the Center for Functional Nanomaterials, Brookhaven National Laboratory, under Contract No. DE-AC02-98CH10886.",

year = "2006",

doi = "10.1116/1.2393292",

language = "English (US)",

volume = "24",

pages = "2881--2885",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "6",

}

TY - JOUR

T1 - Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction

AU - Lu, M.

AU - Tennant, D. M.

AU - Jacobsen, C. J.

N1 - Funding Information: The authors gratefully acknowledge Steve Spector of MIT Lincoln Laboratory, Aaron Stein of Brookhaven National Laboratory and Xiaojing Huang of SUNY at Stony Brook for their early contribution to our zone plate generation software, and Hirofumi Ohki of JEOL for helpful information on JBX-9300FS system. The research was partially supported by the National Science Foundation under Grant No. ECS-0099893 and by the U.S. Department of Energy, through the user proposal of the Center for Functional Nanomaterials, Brookhaven National Laboratory, under Contract No. DE-AC02-98CH10886.

PY - 2006

Y1 - 2006

N2 - The width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub- 50-nm scale in Gaussian e-beam lithography. The authors' analysis shows that this orientation dependence of linewidth variation originates from the nonuniformity of discrete primitive filling in Cartesian coordinates. Two correction schemes based on pattern segmentation are proposed. Test exposures of high resolution zone plate patterns show that both two schemes work well; a double-insert scheme is superior in terms of dose distribution uniformity.

AB - The width of tilted line patterns, such as are needed when drawing circular structures, is found to vary with the oblique angle when it falls into the sub- 50-nm scale in Gaussian e-beam lithography. The authors' analysis shows that this orientation dependence of linewidth variation originates from the nonuniformity of discrete primitive filling in Cartesian coordinates. Two correction schemes based on pattern segmentation are proposed. Test exposures of high resolution zone plate patterns show that both two schemes work well; a double-insert scheme is superior in terms of dose distribution uniformity.

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DO - 10.1116/1.2393292

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Orientation dependence of linewidth variation in sub-50-nm Gaussian e-beam lithography and its correction

Abstract

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