Orientation dependence of strained-Ge surface energies near (001): Role of dimer-vacancy lines and their interactions with steps

C. J. Moore*, C. M. Retford, M. J. Beck, M. Asta, Michael J Miksis, Peter W Voorhees

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Recent experiments and calculations have highlighted the important role of surface-energy (γ) anisotropy in governing island formation in the Ge/Si(001) system. To further elucidate the factors determining this anisotropy, we perform atomistic and continuum calculations of the orientation dependence of γ for strained-Ge surfaces near (001), accounting for the presence of dimer-vacancy lines (DVLs). The net effect of DVLs is found to be a substantial reduction in the magnitude of the slope of γ vs orientation angle, relative to the highly negative value derived for non-DVL, dimer-reconstructed, strained-Ge(001) surfaces. The present results thus point to an important role of DVLs in stabilizing the (001) surface orientation of a strained-Ge wetting layer.

Original languageEnglish (US)
Article number126101
JournalPhysical Review Letters
Volume96
Issue number12
DOIs
StatePublished - Apr 3 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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