Origin of polytype formation in VLS-grown Ge nanowires through defect generation and nanowire kinking

Nari Jeon, Shadi A. Dayeh, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

We propose layer-by-layer growth mechanisms to account for planar defect generation leading to kinked polytype nanowires. Cs-corrected scanning transmission electron microscopy enabled identification of stacking sequences of distinct polytype bands found in kinked nanowires, and Raman spectroscopy was used to distinguish polytype nanowires from twinned nanowires containing only the 3C diamond cubic phase. The faceting and atomic-scale defect structures of twinned 3C are compared with those of polytype nanowires to develop a common model linking nucleation pinning to nanowire morphology and phase.

Original languageEnglish (US)
Pages (from-to)3947-3952
Number of pages6
JournalNano letters
Volume13
Issue number8
DOIs
StatePublished - Aug 14 2013

Keywords

  • Nanowire
  • TEM
  • VLS growth
  • defects
  • kinking
  • polytype

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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