TY - JOUR
T1 - Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films
AU - Blattner, A. J.
AU - Prabhumirashi, P. L.
AU - Dravid, V. P.
AU - Wessels, B. W.
N1 - Funding Information:
This work was supported, in part, by the National Science Foundation through the MRSEC program under grant no. DMR-0076097 and the Spin Electronics Program under ECS-0224210. The authors wish to acknowledge extensive use of the Materials Research Center Facilities at Northwestern University.
PY - 2003/11
Y1 - 2003/11
N2 - The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x=0.01 and a Curie temperature of 330K exhibited a homogeneous distribution of Mn. High Mn concentration films with x=0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).
AB - The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x=0.01 and a Curie temperature of 330K exhibited a homogeneous distribution of Mn. High Mn concentration films with x=0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. Indium manganese arsenide
KW - B2. Diluted magnetic semiconductors
KW - B3. Spintronics
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U2 - 10.1016/S0022-0248(03)01569-0
DO - 10.1016/S0022-0248(03)01569-0
M3 - Article
AN - SCOPUS:0141964089
VL - 259
SP - 8
EP - 11
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-2
ER -