Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films

A. J. Blattner, P. L. Prabhumirashi, V. P. Dravid, B. W. Wessels*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x=0.01 and a Curie temperature of 330K exhibited a homogeneous distribution of Mn. High Mn concentration films with x=0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).

Original languageEnglish (US)
Pages (from-to)8-11
Number of pages4
JournalJournal of Crystal Growth
Issue number1-2
StatePublished - Nov 2003


  • A3. Metalorganic vapor phase epitaxy
  • B1. Indium manganese arsenide
  • B2. Diluted magnetic semiconductors
  • B3. Spintronics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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