Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films

A. J. Blattner; P. L. Prabhumirashi; V. P. Dravid; B. W. Wessels

doi:10.1016/S0022-0248(03)01569-0

Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films

A. J. Blattner, P. L. Prabhumirashi, V. P. Dravid, B. W. Wessels^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In_1-xMn_xAs film with x=0.01 and a Curie temperature of 330K exhibited a homogeneous distribution of Mn. High Mn concentration films with x=0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).

Original language	English (US)
Pages (from-to)	8-11
Number of pages	4
Journal	Journal of Crystal Growth
Volume	259
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(03)01569-0
State	Published - Nov 2003

Funding

This work was supported, in part, by the National Science Foundation through the MRSEC program under grant no. DMR-0076097 and the Spin Electronics Program under ECS-0224210. The authors wish to acknowledge extensive use of the Materials Research Center Facilities at Northwestern University.

Keywords

A3. Metalorganic vapor phase epitaxy
B1. Indium manganese arsenide
B2. Diluted magnetic semiconductors
B3. Spintronics

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(03)01569-0

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title = "Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films",

abstract = "The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x=0.01 and a Curie temperature of 330K exhibited a homogeneous distribution of Mn. High Mn concentration films with x=0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).",

keywords = "A3. Metalorganic vapor phase epitaxy, B1. Indium manganese arsenide, B2. Diluted magnetic semiconductors, B3. Spintronics",

author = "Blattner, {A. J.} and Prabhumirashi, {P. L.} and Dravid, {V. P.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported, in part, by the National Science Foundation through the MRSEC program under grant no. DMR-0076097 and the Spin Electronics Program under ECS-0224210. The authors wish to acknowledge extensive use of the Materials Research Center Facilities at Northwestern University.",

year = "2003",

month = nov,

doi = "10.1016/S0022-0248(03)01569-0",

language = "English (US)",

volume = "259",

pages = "8--11",

journal = "Journal of Crystal Growth",

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T1 - Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films

AU - Blattner, A. J.

AU - Prabhumirashi, P. L.

AU - Dravid, V. P.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported, in part, by the National Science Foundation through the MRSEC program under grant no. DMR-0076097 and the Spin Electronics Program under ECS-0224210. The authors wish to acknowledge extensive use of the Materials Research Center Facilities at Northwestern University.

PY - 2003/11

Y1 - 2003/11

N2 - The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x=0.01 and a Curie temperature of 330K exhibited a homogeneous distribution of Mn. High Mn concentration films with x=0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).

AB - The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x=0.01 and a Curie temperature of 330K exhibited a homogeneous distribution of Mn. High Mn concentration films with x=0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s).

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Indium manganese arsenide

KW - B2. Diluted magnetic semiconductors

KW - B3. Spintronics

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JF - Journal of Crystal Growth

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ER -

Origin of room temperature ferromagnetism in homogeneous (In, Mn)As thin films

Abstract

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Keywords

ASJC Scopus subject areas

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