P-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors

J. Hoff*, X. He, M. Erdtmann, E. Bigan, M. Razeghi, G. J. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Lattice-matched p-doped GaAs-Ga0.51In0.49P quantum well intersub-band photodetectors with three different well widths have been grown on GaAs substrates by metal-organic chemical-vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 Å. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig-Penney calculations.

Original languageEnglish (US)
Pages (from-to)2126-2128
Number of pages3
JournalJournal of Applied Physics
Issue number3
StatePublished - 1995

ASJC Scopus subject areas

  • General Physics and Astronomy


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