P-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors

J. Hoff; X. He; M. Erdtmann; E. Bigan; M. Razeghi; G. J. Brown

doi:10.1063/1.360194

P-doped GaAs/Ga_0.51In_0.49P quantum well intersub-band photodetectors

J. Hoff^*, X. He, M. Erdtmann, E. Bigan, M. Razeghi, G. J. Brown

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Lattice-matched p-doped GaAs-Ga_0.51In_0.49P quantum well intersub-band photodetectors with three different well widths have been grown on GaAs substrates by metal-organic chemical-vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 Å. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig-Penney calculations.

Original language	English (US)
Pages (from-to)	2126-2128
Number of pages	3
Journal	Journal of Applied Physics
Volume	78
Issue number	3
DOIs	https://doi.org/10.1063/1.360194
State	Published - 1995

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Physics and Astronomy(all)

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title = "P-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors",

abstract = "Lattice-matched p-doped GaAs-Ga0.51In0.49P quantum well intersub-band photodetectors with three different well widths have been grown on GaAs substrates by metal-organic chemical-vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 {\AA}. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig-Penney calculations.",

author = "J. Hoff and X. He and M. Erdtmann and E. Bigan and M. Razeghi and Brown, {G. J.}",

year = "1995",

doi = "10.1063/1.360194",

language = "English (US)",

volume = "78",

pages = "2126--2128",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - P-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors

AU - Hoff, J.

AU - He, X.

AU - Erdtmann, M.

AU - Bigan, E.

AU - Razeghi, M.

AU - Brown, G. J.

PY - 1995

Y1 - 1995

N2 - Lattice-matched p-doped GaAs-Ga0.51In0.49P quantum well intersub-band photodetectors with three different well widths have been grown on GaAs substrates by metal-organic chemical-vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 Å. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig-Penney calculations.

AB - Lattice-matched p-doped GaAs-Ga0.51In0.49P quantum well intersub-band photodetectors with three different well widths have been grown on GaAs substrates by metal-organic chemical-vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 Å. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig-Penney calculations.

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JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -

P-doped GaAs/Ga_0.51In_0.49P quantum well intersub-band photodetectors

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