P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

V. E. Sandana; D. J. Rogers; F. H. Teherani; P. Bove; R. McClintock; M. Razeghi

doi:10.1117/12.2520124

P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

V. E. Sandana, D. J. Rogers, F. H. Teherani, P. Bove, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Staggered back-gated Field Effect Transistor (FET) structures were made by growing Li-doped NiO on S_i3N₄/SiO₂/Si (111) using room temperature pulsed laser deposition. Optical studies showed over 80% transmission for the NiO:Li channel at wavelengths > 500nm. The MISFET revealed rectifying transfer characteristics, with a V_ON close to zero, a channel mobility of ∼ 1 cm²/Vs, a gate leakage current (at +5V) of 0.8 mA and an I_ON/I_OFF ratio (at a Vgs of -15V) of ∼ 10³. The transistors showed enhancement-mode output characteristics indicative of a p-type channel with sharp pinchoff, hard saturation, a comparatively high (milliampere range) Id and a relatively low on-resistance of ∼11 kΩ. Hence the adoption of Li doping in NiO channels would appear to be a promising approach to obtain p-type TFTs with superior transparency, speed and energy efficiency.

Original language	English (US)
Title of host publication	Oxide-Based Materials and Devices X
Editors	David J. Rogers, David C. Look, Ferechteh H. Teherani
Publisher	SPIE
ISBN (Electronic)	9781510624801
DOIs	https://doi.org/10.1117/12.2520124
State	Published - Jan 1 2019
Event	Oxide-Based Materials and Devices X 2019 - San Francisco, United States Duration: Feb 3 2019 → Feb 7 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10919
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices X 2019
Country/Territory	United States
City	San Francisco
Period	2/3/19 → 2/7/19

Keywords

Flexible electronics
Lithium-doped nickel oxide
P-type field effect transistor
Pulsed laser deposition
Transparent electronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1117/12.2520124

Cite this

Sandana, V. E., Rogers, D. J., Teherani, F. H., Bove, P., McClintock, R., & Razeghi, M. (2019). P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition. In D. J. Rogers, D. C. Look, & F. H. Teherani (Eds.), Oxide-Based Materials and Devices X Article 109191H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10919). SPIE. https://doi.org/10.1117/12.2520124

@inproceedings{d3183399bec04c35b7aeb507eba30022,

title = "P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition",

abstract = "Staggered back-gated Field Effect Transistor (FET) structures were made by growing Li-doped NiO on Si3N4/SiO2/Si (111) using room temperature pulsed laser deposition. Optical studies showed over 80% transmission for the NiO:Li channel at wavelengths > 500nm. The MISFET revealed rectifying transfer characteristics, with a VON close to zero, a channel mobility of ∼ 1 cm2/Vs, a gate leakage current (at +5V) of 0.8 mA and an ION/IOFF ratio (at a Vgs of -15V) of ∼ 103. The transistors showed enhancement-mode output characteristics indicative of a p-type channel with sharp pinchoff, hard saturation, a comparatively high (milliampere range) Id and a relatively low on-resistance of ∼11 kΩ. Hence the adoption of Li doping in NiO channels would appear to be a promising approach to obtain p-type TFTs with superior transparency, speed and energy efficiency.",

keywords = "Flexible electronics, Lithium-doped nickel oxide, P-type field effect transistor, Pulsed laser deposition, Transparent electronics",

author = "Sandana, {V. E.} and Rogers, {D. J.} and Teherani, {F. H.} and P. Bove and R. McClintock and M. Razeghi",

year = "2019",

month = jan,

day = "1",

doi = "10.1117/12.2520124",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, {David J.} and Look, {David C.} and Teherani, {Ferechteh H.}",

booktitle = "Oxide-Based Materials and Devices X",

note = "Oxide-Based Materials and Devices X 2019 ; Conference date: 03-02-2019 Through 07-02-2019",

}

Sandana, VE, Rogers, DJ, Teherani, FH, Bove, P, McClintock, R & Razeghi, M 2019, P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition. in DJ Rogers, DC Look & FH Teherani (eds), Oxide-Based Materials and Devices X., 109191H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10919, SPIE, Oxide-Based Materials and Devices X 2019, San Francisco, United States, 2/3/19. https://doi.org/10.1117/12.2520124

P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition. / Sandana, V. E.; Rogers, D. J.; Teherani, F. H. et al.
Oxide-Based Materials and Devices X. ed. / David J. Rogers; David C. Look; Ferechteh H. Teherani. SPIE, 2019. 109191H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10919).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

AU - Sandana, V. E.

AU - Rogers, D. J.

AU - Teherani, F. H.

AU - Bove, P.

AU - McClintock, R.

AU - Razeghi, M.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Staggered back-gated Field Effect Transistor (FET) structures were made by growing Li-doped NiO on Si3N4/SiO2/Si (111) using room temperature pulsed laser deposition. Optical studies showed over 80% transmission for the NiO:Li channel at wavelengths > 500nm. The MISFET revealed rectifying transfer characteristics, with a VON close to zero, a channel mobility of ∼ 1 cm2/Vs, a gate leakage current (at +5V) of 0.8 mA and an ION/IOFF ratio (at a Vgs of -15V) of ∼ 103. The transistors showed enhancement-mode output characteristics indicative of a p-type channel with sharp pinchoff, hard saturation, a comparatively high (milliampere range) Id and a relatively low on-resistance of ∼11 kΩ. Hence the adoption of Li doping in NiO channels would appear to be a promising approach to obtain p-type TFTs with superior transparency, speed and energy efficiency.

AB - Staggered back-gated Field Effect Transistor (FET) structures were made by growing Li-doped NiO on Si3N4/SiO2/Si (111) using room temperature pulsed laser deposition. Optical studies showed over 80% transmission for the NiO:Li channel at wavelengths > 500nm. The MISFET revealed rectifying transfer characteristics, with a VON close to zero, a channel mobility of ∼ 1 cm2/Vs, a gate leakage current (at +5V) of 0.8 mA and an ION/IOFF ratio (at a Vgs of -15V) of ∼ 103. The transistors showed enhancement-mode output characteristics indicative of a p-type channel with sharp pinchoff, hard saturation, a comparatively high (milliampere range) Id and a relatively low on-resistance of ∼11 kΩ. Hence the adoption of Li doping in NiO channels would appear to be a promising approach to obtain p-type TFTs with superior transparency, speed and energy efficiency.

KW - Flexible electronics

KW - Lithium-doped nickel oxide

KW - P-type field effect transistor

KW - Pulsed laser deposition

KW - Transparent electronics

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DO - 10.1117/12.2520124

M3 - Conference contribution

AN - SCOPUS:85065773622

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices X

A2 - Rogers, David J.

A2 - Look, David C.

A2 - Teherani, Ferechteh H.

PB - SPIE

T2 - Oxide-Based Materials and Devices X 2019

Y2 - 3 February 2019 through 7 February 2019

ER -

Sandana VE, Rogers DJ, Teherani FH, Bove P, McClintock R, Razeghi M. P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition. In Rogers DJ, Look DC, Teherani FH, editors, Oxide-Based Materials and Devices X. SPIE. 2019. 109191H. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2520124

P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

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