P-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

V. E. Sandana, D. J. Rogers, F. H. Teherani, P. Bove, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


Staggered back-gated Field Effect Transistor (FET) structures were made by growing Li-doped NiO on Si3N4/SiO2/Si (111) using room temperature pulsed laser deposition. Optical studies showed over 80% transmission for the NiO:Li channel at wavelengths > 500nm. The MISFET revealed rectifying transfer characteristics, with a VON close to zero, a channel mobility of ∼ 1 cm2/Vs, a gate leakage current (at +5V) of 0.8 mA and an ION/IOFF ratio (at a Vgs of -15V) of ∼ 103. The transistors showed enhancement-mode output characteristics indicative of a p-type channel with sharp pinchoff, hard saturation, a comparatively high (milliampere range) Id and a relatively low on-resistance of ∼11 kΩ. Hence the adoption of Li doping in NiO channels would appear to be a promising approach to obtain p-type TFTs with superior transparency, speed and energy efficiency.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices X
EditorsDavid J. Rogers, David C. Look, Ferechteh H. Teherani
ISBN (Electronic)9781510624801
StatePublished - Jan 1 2019
EventOxide-Based Materials and Devices X 2019 - San Francisco, United States
Duration: Feb 3 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceOxide-Based Materials and Devices X 2019
Country/TerritoryUnited States
CitySan Francisco


  • Flexible electronics
  • Lithium-doped nickel oxide
  • P-type field effect transistor
  • Pulsed laser deposition
  • Transparent electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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