TY - JOUR
T1 - Parallel Dislocation Networks and Cottrell Atmospheres Reduce Thermal Conductivity of PbTe Thermoelectrics
AU - Abdellaoui, Lamya
AU - Chen, Zhiwei
AU - Yu, Yuan
AU - Luo, Ting
AU - Hanus, Riley
AU - Schwarz, Torsten
AU - Bueno Villoro, Ruben
AU - Cojocaru-Mirédin, Oana
AU - Snyder, Gerald Jeffrey
AU - Raabe, Dierk
AU - Pei, Yanzhong
AU - Scheu, Christina
AU - Zhang, Siyuan
N1 - Funding Information:
The authors acknowledge Monika Nellessen for the help in sample preparation and SEM imaging, and Dr. Stefan Zaefferer for fruitful discussions. T.L. acknowledges the financial support from the Alexander von Humboldt Foundation. G.J.S. acknowledges the support of award 70NANB19H005 from NIST as part of the Center for Hierarchical Materials Design (CHiMaD).
Publisher Copyright:
© 2021 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH
PY - 2021/5/17
Y1 - 2021/5/17
N2 - Dislocations play an important role in thermal transport by scattering phonons. Nevertheless, for materials with intrinsically low thermal conductivity, such as thermoelectrics, classical models require exceedingly high numbers of dislocations (>1012 cm–2) to further impede thermal transport. In this work, a significant reduction in thermal conductivity of Na0.025Eu0.03Pb0.945Te is demonstrated at a moderate dislocation density of 1 × 1010 cm–2. Further characteristics of dislocations, including their arrangement, orientation, and local chemistry are shown to be crucial to their phonon-scattering effect and are characterized by correlative microscopy techniques. Electron channeling contrast imaging reveals a uniform distribution of dislocations within individual grains, with parallel lines along four <111> directions. Transmission electron microscopy (TEM) shows the parallel networks are edge-type and share the same Burgers vectors within each group. Atom probe tomography reveals the enrichment of dopant Na at dislocation cores, forming Cottrell atmospheres. The dislocation network is demonstrated to be stable during in situ heating in the TEM. Using the Callaway transport model, it is demonstrated that both parallel arrangement of dislocations and Cottrell atmospheres make dislocations more efficient in phonon scattering. These two mechanisms provide new avenues to lower the thermal conductivity in materials for thermal-insulating applications.
AB - Dislocations play an important role in thermal transport by scattering phonons. Nevertheless, for materials with intrinsically low thermal conductivity, such as thermoelectrics, classical models require exceedingly high numbers of dislocations (>1012 cm–2) to further impede thermal transport. In this work, a significant reduction in thermal conductivity of Na0.025Eu0.03Pb0.945Te is demonstrated at a moderate dislocation density of 1 × 1010 cm–2. Further characteristics of dislocations, including their arrangement, orientation, and local chemistry are shown to be crucial to their phonon-scattering effect and are characterized by correlative microscopy techniques. Electron channeling contrast imaging reveals a uniform distribution of dislocations within individual grains, with parallel lines along four <111> directions. Transmission electron microscopy (TEM) shows the parallel networks are edge-type and share the same Burgers vectors within each group. Atom probe tomography reveals the enrichment of dopant Na at dislocation cores, forming Cottrell atmospheres. The dislocation network is demonstrated to be stable during in situ heating in the TEM. Using the Callaway transport model, it is demonstrated that both parallel arrangement of dislocations and Cottrell atmospheres make dislocations more efficient in phonon scattering. These two mechanisms provide new avenues to lower the thermal conductivity in materials for thermal-insulating applications.
KW - Cottrell atmospheres
KW - correlative microscopy
KW - dislocation networks
KW - phonon transport
KW - thermoelectrics
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U2 - 10.1002/adfm.202101214
DO - 10.1002/adfm.202101214
M3 - Article
AN - SCOPUS:85102295636
SN - 1616-301X
VL - 31
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 20
M1 - 2101214
ER -