TY - GEN
T1 - Particles as transport carriers in CMP slurries
AU - White, Daniela
AU - Parker, John
AU - Li, Shuyou
AU - Dravid, Vinayak
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Nanoparticles provide multiple functionalities (chemical, mechanical) to the performance of CMP slurries. In this presentation we will highlight the significance of slurry abrasives as surface modified nanoparticles/chemical carriers, able to directly participate and control the metal oxidation/removal mechanism, removal rates and other polishing characteristics. We will discuss two relevant examples, both involving fumed silica as the carrier particle in two different low pH slurries of variable complexities in terms of design (with/without particles surface modifiers) and performance requirements for tungsten CMP. We will provide a complex variety of analytical evidence (TEMEELS, SEM, FT-IR, GPC, cyclic voltammetry, MS-TOF) in order to support the proposed mechanism of "chemically activated fumed silica", in its natural (no interactions with organic additives in the slurry) and surface modified form (in-situ interactions with organic additives), as a carrier of selective slurry components with enhanced chemical activity, that ultimately controls the tungsten CMP mechanism and the ability of the slurry to efficiently and predictably remove the oxidized tungsten film formed at the wafer surface.
AB - Nanoparticles provide multiple functionalities (chemical, mechanical) to the performance of CMP slurries. In this presentation we will highlight the significance of slurry abrasives as surface modified nanoparticles/chemical carriers, able to directly participate and control the metal oxidation/removal mechanism, removal rates and other polishing characteristics. We will discuss two relevant examples, both involving fumed silica as the carrier particle in two different low pH slurries of variable complexities in terms of design (with/without particles surface modifiers) and performance requirements for tungsten CMP. We will provide a complex variety of analytical evidence (TEMEELS, SEM, FT-IR, GPC, cyclic voltammetry, MS-TOF) in order to support the proposed mechanism of "chemically activated fumed silica", in its natural (no interactions with organic additives in the slurry) and surface modified form (in-situ interactions with organic additives), as a carrier of selective slurry components with enhanced chemical activity, that ultimately controls the tungsten CMP mechanism and the ability of the slurry to efficiently and predictably remove the oxidized tungsten film formed at the wafer surface.
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M3 - Conference contribution
AN - SCOPUS:38549147942
SN - 9781558999510
T3 - Materials Research Society Symposium Proceedings
SP - 145
EP - 150
BT - 2007 MRS Spring Meeting
T2 - 2007 MRS Spring Meeting
Y2 - 10 April 2007 through 12 April 2007
ER -