Passivation of defects in ZnO nanowires by SiO2 sputtering deposition

C. I.L. Sombrio*, P. L. Franzen, Roberto dos Reis, H. I. Boudinov, D. L. Baptista

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Passivation of native point defects in ZnO nanowires was successfully achieved by SiO2 deposition. The ZnO nanowires were grown on sapphire by the vapor-liquid-solid method and coated with SiO2 through reactive sputtering deposition. The samples were post-annealed at different temperatures in Argon atmosphere. Photoluminescence measurements at room temperature and electron transmission microscopy were performed. The coated nanowires present a core-shell structure. A strong oxygen vacancies passivation were observed resulting in a drastic suppression on visible light emissions in favor of UV ones. On the other hand, annealing at increasingly higher temperatures favored the oxygen desorption and the increase of deep-level states.

Original languageEnglish (US)
Pages (from-to)126-129
Number of pages4
JournalMaterials Letters
Volume134
DOIs
StatePublished - Nov 1 2014

Keywords

  • Native point defects passivation
  • Photoluminescence
  • Zinc oxide nanowires

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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