Passivation of type-II InAsGaSb double heterostructure

Pierre Yves Delaunay*, Andrew Hood, Binh Minh Nguyen, Darin Hoffman, Yajun Wei, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

90 Scopus citations

Abstract

Focal plane array fabrication requires a well passivated material that is resistant to aggressive processes. The authors report on the ability of type-II InAsGaSb superlattice heterodiodes to be more resilient than homojunctions diodes in improving sidewall resistivity through the use of various passivation techniques. The heterostructure consisting of two wide band gap (5 μm) superlattice contacts and a low band gap active region (11 μm) exhibits an R0 A averaging of 13 cm2. The devices passivated with Si O2, Na2 S and Si O2 or polyimide did not degrade compared to the unpassivated sample and the resistivity of the sidewalls increased to 47 k cm.

Original languageEnglish (US)
Article number091112
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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