Passivation of type II InAs/GaSb superlattice photodetectors

Andrew Hood; Yajun Wei; Aaron Gin; Manijeh Razeghi; Meimei Z. Tidrow; Vaidya Nathan

doi:10.1117/12.597140

Passivation of type II InAs/GaSb superlattice photodetectors

Andrew Hood^*, Yajun Wei, Aaron Gin, Manijeh Razeghi, Meimei Z. Tidrow, Vaidya Nathan

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Leakage currents limit the operation of high performance type II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 μm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of type II InAs\GaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R ₀A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated type II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed.

Original language	English (US)
Article number	45
Pages (from-to)	316-325
Number of pages	10
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5732
DOIs	https://doi.org/10.1117/12.597140
State	Published - 2005
Event	Quantum Sensing and Nanophotonic Devices II - San Jose, CA, United States Duration: Jan 23 2005 → Jan 27 2005

Keywords

Ammonium sulfide
GaSb
InAs
Infrared
Passivation
Photoluminescence
Sulfur
Superlattices
Type II

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Biomaterials
Radiology Nuclear Medicine and imaging

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10.1117/12.597140

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title = "Passivation of type II InAs/GaSb superlattice photodetectors",

abstract = "Leakage currents limit the operation of high performance type II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 μm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of type II InAs\GaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R 0A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated type II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed.",

keywords = "Ammonium sulfide, GaSb, InAs, Infrared, Passivation, Photoluminescence, Sulfur, Superlattices, Type II",

author = "Andrew Hood and Yajun Wei and Aaron Gin and Manijeh Razeghi and Tidrow, {Meimei Z.} and Vaidya Nathan",

year = "2005",

doi = "10.1117/12.597140",

language = "English (US)",

volume = "5732",

pages = "316--325",

journal = "Progress in Biomedical Optics and Imaging - Proceedings of SPIE",

issn = "1605-7422",

publisher = "SPIE",

note = "Quantum Sensing and Nanophotonic Devices II ; Conference date: 23-01-2005 Through 27-01-2005",

}

TY - JOUR

T1 - Passivation of type II InAs/GaSb superlattice photodetectors

AU - Hood, Andrew

AU - Wei, Yajun

AU - Gin, Aaron

AU - Razeghi, Manijeh

AU - Tidrow, Meimei Z.

AU - Nathan, Vaidya

PY - 2005

Y1 - 2005

N2 - Leakage currents limit the operation of high performance type II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 μm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of type II InAs\GaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R 0A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated type II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed.

AB - Leakage currents limit the operation of high performance type II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 μm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of type II InAs\GaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R 0A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated type II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed.

KW - Ammonium sulfide

KW - GaSb

KW - InAs

KW - Infrared

KW - Passivation

KW - Photoluminescence

KW - Sulfur

KW - Superlattices

KW - Type II

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U2 - 10.1117/12.597140

DO - 10.1117/12.597140

M3 - Conference article

AN - SCOPUS:21844462334

SN - 1605-7422

VL - 5732

SP - 316

EP - 325

JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

M1 - 45

T2 - Quantum Sensing and Nanophotonic Devices II

Y2 - 23 January 2005 through 27 January 2005

ER -

Passivation of type II InAs/GaSb superlattice photodetectors

Abstract

Keywords

ASJC Scopus subject areas

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