Passivation of type II InAs/GaSb superlattice photodetectors

Andrew Hood*, Yajun Wei, Aaron Gin, Manijeh Razeghi, Meimei Z. Tidrow, Vaidya Nathan

*Corresponding author for this work

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

Leakage currents limit the operation of high performance type II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 μm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of type II InAs\GaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R 0A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated type II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed.

Original languageEnglish (US)
Article number45
Pages (from-to)316-325
Number of pages10
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5732
DOIs
StatePublished - Jul 21 2005
EventQuantum Sensing and Nanophotonic Devices II - San Jose, CA, United States
Duration: Jan 23 2005Jan 27 2005

Keywords

  • Ammonium sulfide
  • GaSb
  • InAs
  • Infrared
  • Passivation
  • Photoluminescence
  • Sulfur
  • Superlattices
  • Type II

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

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