Passivation of type II InAs/GaSb superlattice photodiodes

Aaron Gin, Yajun Wei, Junjik Bae, Andrew Hood, Jongbum Nah, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

75 Scopus citations

Abstract

Recently, excellent infrared detectors have been demonstrated using Type II InAs/GaSb superlattice materials sensitive at wavelengths from 3 μm to greater than 32 μm. These results indicate that Type II superlattice devices may challenge the preponderance of HgCdTe and other state-of-the-art infrared material systems. As such, surface passivation is becoming an increasingly important issue as progress is made towards the commercialization of Type II devices and focal plane array applications. This work focuses on initial attempts at surface passivation of Type II InAs/GaSb superlattice photodiodes using PECVD-grown thin layers of SiO2. Our results indicate that silicon dioxide coatings deposited at various temperatures improve photodetector resistivity by several times. Furthermore, reverse-bias dark current has been reduced significantly in passivated devices.

Original languageEnglish (US)
Pages (from-to)489-492
Number of pages4
JournalThin Solid Films
Volume447-448
DOIs
StatePublished - Jan 30 2004
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: Apr 28 2002May 2 2002

Keywords

  • InAs/GaSb superlattices
  • Photodiodes
  • Surface passivation
  • Type II: Infrared detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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