Passivation of type II InAs/GaSb superlattice photodiodes

Aaron Gin; Yajun Wei; Junjik Bae; Andrew Hood; Jongbum Nah; Manijeh Razeghi

doi:10.1016/j.tsf.2003.09.002

Passivation of type II InAs/GaSb superlattice photodiodes

Aaron Gin, Yajun Wei, Junjik Bae, Andrew Hood, Jongbum Nah, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

85 Scopus citations

Abstract

Recently, excellent infrared detectors have been demonstrated using Type II InAs/GaSb superlattice materials sensitive at wavelengths from 3 μm to greater than 32 μm. These results indicate that Type II superlattice devices may challenge the preponderance of HgCdTe and other state-of-the-art infrared material systems. As such, surface passivation is becoming an increasingly important issue as progress is made towards the commercialization of Type II devices and focal plane array applications. This work focuses on initial attempts at surface passivation of Type II InAs/GaSb superlattice photodiodes using PECVD-grown thin layers of SiO₂. Our results indicate that silicon dioxide coatings deposited at various temperatures improve photodetector resistivity by several times. Furthermore, reverse-bias dark current has been reduced significantly in passivated devices.

Original language	English (US)
Pages (from-to)	489-492
Number of pages	4
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.09.002
State	Published - Jan 30 2004
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: Apr 28 2002 → May 2 2002

Keywords

InAs/GaSb superlattices
Photodiodes
Surface passivation
Type II: Infrared detector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Passivation of type II InAs/GaSb superlattice photodiodes",

abstract = "Recently, excellent infrared detectors have been demonstrated using Type II InAs/GaSb superlattice materials sensitive at wavelengths from 3 μm to greater than 32 μm. These results indicate that Type II superlattice devices may challenge the preponderance of HgCdTe and other state-of-the-art infrared material systems. As such, surface passivation is becoming an increasingly important issue as progress is made towards the commercialization of Type II devices and focal plane array applications. This work focuses on initial attempts at surface passivation of Type II InAs/GaSb superlattice photodiodes using PECVD-grown thin layers of SiO2. Our results indicate that silicon dioxide coatings deposited at various temperatures improve photodetector resistivity by several times. Furthermore, reverse-bias dark current has been reduced significantly in passivated devices.",

keywords = "InAs/GaSb superlattices, Photodiodes, Surface passivation, Type II: Infrared detector",

author = "Aaron Gin and Yajun Wei and Junjik Bae and Andrew Hood and Jongbum Nah and Manijeh Razeghi",

note = "Funding Information: A. Gin is supported under a National Science Foundation Graduate Research Fellowship. MDA and AFOSR support this work under contract F49620-01-1-0087. The authors would also like to acknowledge the support of Dr Meimei Tidrow (MDA), Dr Gail Brown (AFRL), Dr Paul LeVan (AFRL) and Dr Todd Steiner (AFOSR).; Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

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doi = "10.1016/j.tsf.2003.09.002",

language = "English (US)",

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T1 - Passivation of type II InAs/GaSb superlattice photodiodes

AU - Gin, Aaron

AU - Wei, Yajun

AU - Bae, Junjik

AU - Hood, Andrew

AU - Nah, Jongbum

AU - Razeghi, Manijeh

N1 - Funding Information: A. Gin is supported under a National Science Foundation Graduate Research Fellowship. MDA and AFOSR support this work under contract F49620-01-1-0087. The authors would also like to acknowledge the support of Dr Meimei Tidrow (MDA), Dr Gail Brown (AFRL), Dr Paul LeVan (AFRL) and Dr Todd Steiner (AFOSR).

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Recently, excellent infrared detectors have been demonstrated using Type II InAs/GaSb superlattice materials sensitive at wavelengths from 3 μm to greater than 32 μm. These results indicate that Type II superlattice devices may challenge the preponderance of HgCdTe and other state-of-the-art infrared material systems. As such, surface passivation is becoming an increasingly important issue as progress is made towards the commercialization of Type II devices and focal plane array applications. This work focuses on initial attempts at surface passivation of Type II InAs/GaSb superlattice photodiodes using PECVD-grown thin layers of SiO2. Our results indicate that silicon dioxide coatings deposited at various temperatures improve photodetector resistivity by several times. Furthermore, reverse-bias dark current has been reduced significantly in passivated devices.

AB - Recently, excellent infrared detectors have been demonstrated using Type II InAs/GaSb superlattice materials sensitive at wavelengths from 3 μm to greater than 32 μm. These results indicate that Type II superlattice devices may challenge the preponderance of HgCdTe and other state-of-the-art infrared material systems. As such, surface passivation is becoming an increasingly important issue as progress is made towards the commercialization of Type II devices and focal plane array applications. This work focuses on initial attempts at surface passivation of Type II InAs/GaSb superlattice photodiodes using PECVD-grown thin layers of SiO2. Our results indicate that silicon dioxide coatings deposited at various temperatures improve photodetector resistivity by several times. Furthermore, reverse-bias dark current has been reduced significantly in passivated devices.

KW - InAs/GaSb superlattices

KW - Photodiodes

KW - Surface passivation

KW - Type II: Infrared detector

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DO - 10.1016/j.tsf.2003.09.002

M3 - Conference article

AN - SCOPUS:1342302427

SN - 0040-6090

VL - 447-448

SP - 489

EP - 492

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 30th International Conference on Metallurgie

Y2 - 28 April 2002 through 2 May 2002

ER -

Passivation of type II InAs/GaSb superlattice photodiodes

Abstract

Keywords

ASJC Scopus subject areas

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