Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

Sangkyu Lee, Jeonghyun Kim, Junghyun Choi, Hyunjung Park, Jaehwan Ha, Yongkwan Kim, John A. Rogers*, Ungyu Paik

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm 2V -1s -1, with on/off current ratios of 10 3 and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (∼1.5 m) that provide a path to printed transistors with small critical dimensions.

Original languageEnglish (US)
Article number102108
JournalApplied Physics Letters
Volume100
Issue number10
DOIs
StatePublished - Mar 5 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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