Patterning magnetic antidot-type arrays by GA+ implantation

Nicholas Wyn Owen*, Hang Yan Yuen, Amanda K. Petford-Long

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The patterning of magnetic antidot-type array by Ga+ implantation was discussed. It was found that the hard axis bit-like domains arised at remanence when the demagnetising energy, determined by the number and spatial distribution of free poles on the antidot edges, and the uniaxial anisotropy of the film were of same order. The analysis suggested the consideration of an additional energy density term accounting for the pinning of domain walls at implanted regions while studying the domain structure in these systems.

Original languageEnglish (US)
JournalDigests of the Intermag Conference
StatePublished - Dec 1 2002
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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