The patterning of magnetic antidot-type array by Ga+ implantation was discussed. It was found that the hard axis bit-like domains arised at remanence when the demagnetising energy, determined by the number and spatial distribution of free poles on the antidot edges, and the uniaxial anisotropy of the film were of same order. The analysis suggested the consideration of an additional energy density term accounting for the pinning of domain walls at implanted regions while studying the domain structure in these systems.
|Original language||English (US)|
|Journal||Digests of the Intermag Conference|
|State||Published - Dec 1 2002|
|Event||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
Duration: Apr 28 2002 → May 2 2002
ASJC Scopus subject areas
- Electrical and Electronic Engineering