Abstract
Motivated by reports of the effect of ion irradiation on the magnetic properties of thin films, this paper outlines a new and possibly advantageous method of patterning magnetic antidot-type arrays by changing the magnetic properties of thin-film NiFe through Ga+ implantation rather than by removal of material. Studies of conventional antidot arrays have reported regular remenant states of interest as possible stored bits trapped during hard axis magnetization reversal. In this paper, we report a study of Ga+ implanted antidot-type arrays, which also support remanent states during hard and easy axis magnetization reversal. The energetics of the implanted antidot-type array system are considered, and the reason for the different magnetization reversal process in comparison with conventional antidot arrays is speculated to be due to the energy associated with the increased coercivity and domain wall pinning at implantation-induced damage sites.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2553-2555 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 38 |
| Issue number | 5 I |
| DOIs | |
| State | Published - Sep 2002 |
| Event | 2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002 |
Keywords
- Antidot array
- FIB Ga implantation
- Lorentz microscopy
- Patterned media
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering