Patterning magnetic antidot-type arrays Ga+ implantation

Nicholas Owen*, Hang Yan Yuen, Amanda Petford-Long

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

Motivated by reports of the effect of ion irradiation on the magnetic properties of thin films, this paper outlines a new and possibly advantageous method of patterning magnetic antidot-type arrays by changing the magnetic properties of thin-film NiFe through Ga+ implantation rather than by removal of material. Studies of conventional antidot arrays have reported regular remenant states of interest as possible stored bits trapped during hard axis magnetization reversal. In this paper, we report a study of Ga+ implanted antidot-type arrays, which also support remanent states during hard and easy axis magnetization reversal. The energetics of the implanted antidot-type array system are considered, and the reason for the different magnetization reversal process in comparison with conventional antidot arrays is speculated to be due to the energy associated with the increased coercivity and domain wall pinning at implantation-induced damage sites.

Original languageEnglish (US)
Pages (from-to)2553-2555
Number of pages3
JournalIEEE Transactions on Magnetics
Volume38
Issue number5 I
DOIs
StatePublished - Sep 1 2002
Event2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

Keywords

  • Antidot array
  • FIB Ga implantation
  • Lorentz microscopy
  • Patterned media

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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