Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 μm laser diodes

M. Razeghi*, J. Diaz, I. Eliashevich, X. He, H. Yi, M. Erdtman, E. Kolev, L. Wang, D. Garbuzov

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

GaInAsP high power laser emitting at 808nm with a ηd=1.1 W/A, Jth=200 A/cm2, and To=155°C have been grown by LP-MOCVD. Far field divergence of 27°, output power of 3W in pulse- regime, 1.5W in quasi-CW-, and 1W in CW-mode per uncoated facet have been obtained for 1 mm long diodes.

Original languageEnglish (US)
Pages (from-to)159-160
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - Dec 1 1994
EventProceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA
Duration: Sep 19 1994Sep 23 1994

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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