Abstract
GaInAsP high power laser emitting at 808nm with a ηd=1.1 W/A, Jth=200 A/cm2, and To=155°C have been grown by LP-MOCVD. Far field divergence of 27°, output power of 3W in pulse- regime, 1.5W in quasi-CW-, and 1W in CW-mode per uncoated facet have been obtained for 1 mm long diodes.
Original language | English (US) |
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Pages (from-to) | 159-160 |
Number of pages | 2 |
Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
State | Published - Dec 1 1994 |
Event | Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: Sep 19 1994 → Sep 23 1994 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering