Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices

Jiakai Li, Arash Dehzangi, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs) based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K.

Original languageEnglish (US)
Article number103641
JournalInfrared Physics and Technology
Volume113
DOIs
StatePublished - Mar 2021

Keywords

  • Heterojunction phototransistors
  • Infrared photodetectors
  • Type-II superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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