TY - JOUR
T1 - Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices
AU - Li, Jiakai
AU - Dehzangi, Arash
AU - Razeghi, Manijeh
N1 - Funding Information:
This work was supported by the Defense Advanced Research Projects Agency (DARPA) Contract No. FA8650-18-1-7810 and partially supported by NASA Contract No. 80NSSC18C0170 . The authors would like to acknowledge the interest, support and encouragement of, Dr. Whitney Mason from DARPA, Dr. Kurt Eyink and Dr. Gail J. Brown from the U.S. Air Force Research Laboratory, Dr. Murzy Jhabvala from NASA Goddard Space Flight Center, Dr. Meimei Tidrow from the U.S. Army Night Vision Laboratory, Dr. Michael Gerhold and Dr. Tania Paskova from the U.S. Army Futures Command.
Funding Information:
This work was supported by the Defense Advanced Research Projects Agency (DARPA) Contract No. FA8650-18-1-7810 and partially supported by NASA Contract No. 80NSSC18C0170. The authors would like to acknowledge the interest, support and encouragement of, Dr. Whitney Mason from DARPA, Dr. Kurt Eyink and Dr. Gail J. Brown from the U.S. Air Force Research Laboratory, Dr. Murzy Jhabvala from NASA Goddard Space Flight Center, Dr. Meimei Tidrow from the U.S. Army Night Vision Laboratory, Dr. Michael Gerhold and Dr. Tania Paskova from the U.S. Army Futures Command.
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/3
Y1 - 2021/3
N2 - In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs) based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K.
AB - In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs) based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K.
KW - Heterojunction phototransistors
KW - Infrared photodetectors
KW - Type-II superlattices
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U2 - 10.1016/j.infrared.2021.103641
DO - 10.1016/j.infrared.2021.103641
M3 - Article
AN - SCOPUS:85100420625
SN - 1350-4495
VL - 113
JO - Infrared Physics
JF - Infrared Physics
M1 - 103641
ER -