Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices

Jiakai Li; Arash Dehzangi; Manijeh Razeghi

doi:10.1016/j.infrared.2021.103641

Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices

Jiakai Li, Arash Dehzangi, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs) based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K.

Original language	English (US)
Article number	103641
Journal	Infrared Physics and Technology
Volume	113
DOIs	https://doi.org/10.1016/j.infrared.2021.103641
State	Published - Mar 2021

Keywords

Heterojunction phototransistors
Infrared photodetectors
Type-II superlattices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.infrared.2021.103641

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title = "Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices",

abstract = "In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs) based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K.",

keywords = "Heterojunction phototransistors, Infrared photodetectors, Type-II superlattices",

author = "Jiakai Li and Arash Dehzangi and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = mar,

doi = "10.1016/j.infrared.2021.103641",

language = "English (US)",

volume = "113",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

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AU - Li, Jiakai

AU - Dehzangi, Arash

AU - Razeghi, Manijeh

PY - 2021/3

Y1 - 2021/3

N2 - In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs) based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K.

AB - In this study, a comprehensive analysis of the n-p-n infrared heterojunction phototransistors (HPTs) based on Type-II superlattices has been demonstrated. Different kinds of Type-II superlattices were carefully chosen for the emitter, base, and collector to improve the optical performance. The effects of different device parameters include emitter doping concentration, base doping concentration, base thickness and energy bandgap difference between emitter and base on the optical gain of the HPTs have been investigated. By scaling the base thickness to 20 nm, the HPT exhibits an optical gain of 345.3 at 1.6 μm at room temperature. For a 10 μm diameter HPT device, a −3 dB cut-off frequency of 5.1 GHz was achieved under 20 V at 150 K.

KW - Heterojunction phototransistors

KW - Infrared photodetectors

KW - Type-II superlattices

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Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices

Abstract

Keywords

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