Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping

C. Bayram; J. L. Pau; R. McClintock; M. Razeghi

doi:10.1063/1.2948857

Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping

C. Bayram^*, J. L. Pau, R. McClintock, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

High quality δ -doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ -doped p-GaN also achieve a maximum multiplication gain of 5.1× 10⁴, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ -doping.

Original language	English (US)
Article number	241103
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2948857
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping",

abstract = "High quality δ -doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ -doped p-GaN also achieve a maximum multiplication gain of 5.1× 104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ -doping.",

author = "C. Bayram and Pau, {J. L.} and R. McClintock and M. Razeghi",

note = "Funding Information: The authors would like to acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).",

year = "2008",

doi = "10.1063/1.2948857",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping

AU - Bayram, C.

AU - Pau, J. L.

AU - McClintock, R.

AU - Razeghi, M.

N1 - Funding Information: The authors would like to acknowledge the Fulbright Association and the Spanish Ministry of Education and Science for supporting one of the authors (J.L.P.).

PY - 2008

Y1 - 2008

N2 - High quality δ -doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ -doped p-GaN also achieve a maximum multiplication gain of 5.1× 104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ -doping.

AB - High quality δ -doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ -doped p-GaN also achieve a maximum multiplication gain of 5.1× 104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ -doping.

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DO - 10.1063/1.2948857

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JF - Applied Physics Letters

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ER -

Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping

Abstract

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