Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping

C. Bayram*, J. L. Pau, R. McClintock, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

High quality δ -doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ -doped p-GaN also achieve a maximum multiplication gain of 5.1× 104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ -doping.

Original languageEnglish (US)
Article number241103
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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