Abstract
Electrode buffer layer has been extensively studied to improve the performance of organic field-effect transistor (OFET). Here, poly(methylmethacrylate) (PMMA) was employed as an electrode buffer layer between poly(3-hexylthiophene) (P3HT) layer and gold electrodes in OFETs. These OFETs exhibited nearly five-fold enhancement of hole mobility. Through atomic force microscope and grazing-incidence X-ray diffraction analyses, the performance enhancement was attributed to the uniformity and hydrophobicity of PMMA surface, which led to a remarkable reduction of contact resistance at P3HT/electrode interface. This study provides a facile strategy for the performance enhancement of OFET and insights into the essentiality of buffer layers.
| Original language | English (US) |
|---|---|
| Article number | 111607 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 11 |
| DOIs | |
| State | Published - Mar 18 2013 |
Funding
This research was funded by the National Science Foundation of China (NSFC) (Grant No. 61177032), the Foundation for Innovative Research Groups of the NSFC (Grant No. 61021061), the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010Z004), SRF for ROCS, SEM (Grant No. GGRYJJ08-05), and Doctoral Fund of the Ministry of Education of China (Grant No. 20090185110020).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)