Performance enhancement of poly(3-hexylthiophene) organic field-effect transistor by inserting poly(methylmethacrylate) buffer layer

Wei Shi, Junsheng Yu*, Wei Huang, Xinge Yu, Yifan Zheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Electrode buffer layer has been extensively studied to improve the performance of organic field-effect transistor (OFET). Here, poly(methylmethacrylate) (PMMA) was employed as an electrode buffer layer between poly(3-hexylthiophene) (P3HT) layer and gold electrodes in OFETs. These OFETs exhibited nearly five-fold enhancement of hole mobility. Through atomic force microscope and grazing-incidence X-ray diffraction analyses, the performance enhancement was attributed to the uniformity and hydrophobicity of PMMA surface, which led to a remarkable reduction of contact resistance at P3HT/electrode interface. This study provides a facile strategy for the performance enhancement of OFET and insights into the essentiality of buffer layers.

Original languageEnglish (US)
Article number111607
JournalApplied Physics Letters
Volume102
Issue number11
DOIs
StatePublished - Mar 18 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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