Performance simulation for ferroelectric thin-film based waveguide electro-optic modulators

De Gui Sun; Zhifu Liu; Yingyan Huang; Seng Tiong Ho; David J. Towner; Bruce W. Wessels

doi:10.1016/j.optcom.2005.06.028

Performance simulation for ferroelectric thin-film based waveguide electro-optic modulators

De Gui Sun, Zhifu Liu^*, Yingyan Huang, Seng Tiong Ho, David J. Towner, Bruce W. Wessels

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We simulate thin-film based electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size by using BaTiO₃ ferroelectric film as an exemplary device material with optimizing film thickness. The calculations are performed for both the case of an experimental film having r_eff = 35 pm/V and the case of an ideal thin-film having r₅₁ = 730 pm/V. For the case of r₅₁ = 730 pm/V, a new relation between the drive voltage and the interaction length is derived with respect to the special configuration of BaTiO₃ thin-films. For the optimal case of the film thickness and the waveguide design, the frequency-voltage-size performances that can be achieved include: >2.5 GHz with 0.75 V V_π and 31.1 mm length, 10 GHz with 1.5 V V _π and 7.8 mm length, > 40 GHz with 3.0 V V_π and 1.9 mm length, and > 100 GHz with 4.8 V V_π and 0.8 mm length. Various physical factors unique to the frequency-voltage-size performance trade-off of the thin-film EO modulator structures are discussed.

Original language	English (US)
Pages (from-to)	319-330
Number of pages	12
Journal	Optics Communications
Volume	255
Issue number	4-6
DOIs	https://doi.org/10.1016/j.optcom.2005.06.028
State	Published - Nov 15 2005

Funding

The authors gratefully acknowledge the funding of the research by the MRSEC program of the National Science Foundation (DMR-0076097) at Northwestern University and the 100-Person-Plan Program of the Chinese Academy of Sciences.

Keywords

BaTiO thin-film
Characteristic impedance
Electro-optic modulator
Frequency response
Microwave propagation loss
Optical waveguide
Quadratic EO relation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.1016/j.optcom.2005.06.028

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title = "Performance simulation for ferroelectric thin-film based waveguide electro-optic modulators",

abstract = "We simulate thin-film based electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size by using BaTiO3 ferroelectric film as an exemplary device material with optimizing film thickness. The calculations are performed for both the case of an experimental film having reff = 35 pm/V and the case of an ideal thin-film having r51 = 730 pm/V. For the case of r51 = 730 pm/V, a new relation between the drive voltage and the interaction length is derived with respect to the special configuration of BaTiO3 thin-films. For the optimal case of the film thickness and the waveguide design, the frequency-voltage-size performances that can be achieved include: >2.5 GHz with 0.75 V Vπ and 31.1 mm length, 10 GHz with 1.5 V V π and 7.8 mm length, > 40 GHz with 3.0 V Vπ and 1.9 mm length, and > 100 GHz with 4.8 V Vπ and 0.8 mm length. Various physical factors unique to the frequency-voltage-size performance trade-off of the thin-film EO modulator structures are discussed.",

keywords = "BaTiO thin-film, Characteristic impedance, Electro-optic modulator, Frequency response, Microwave propagation loss, Optical waveguide, Quadratic EO relation",

author = "Sun, {De Gui} and Zhifu Liu and Yingyan Huang and Ho, {Seng Tiong} and Towner, {David J.} and Wessels, {Bruce W.}",

note = "Funding Information: The authors gratefully acknowledge the funding of the research by the MRSEC program of the National Science Foundation (DMR-0076097) at Northwestern University and the 100-Person-Plan Program of the Chinese Academy of Sciences.",

year = "2005",

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doi = "10.1016/j.optcom.2005.06.028",

language = "English (US)",

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pages = "319--330",

journal = "Optics Communications",

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TY - JOUR

T1 - Performance simulation for ferroelectric thin-film based waveguide electro-optic modulators

AU - Sun, De Gui

AU - Liu, Zhifu

AU - Huang, Yingyan

AU - Ho, Seng Tiong

AU - Towner, David J.

AU - Wessels, Bruce W.

N1 - Funding Information: The authors gratefully acknowledge the funding of the research by the MRSEC program of the National Science Foundation (DMR-0076097) at Northwestern University and the 100-Person-Plan Program of the Chinese Academy of Sciences.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - We simulate thin-film based electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size by using BaTiO3 ferroelectric film as an exemplary device material with optimizing film thickness. The calculations are performed for both the case of an experimental film having reff = 35 pm/V and the case of an ideal thin-film having r51 = 730 pm/V. For the case of r51 = 730 pm/V, a new relation between the drive voltage and the interaction length is derived with respect to the special configuration of BaTiO3 thin-films. For the optimal case of the film thickness and the waveguide design, the frequency-voltage-size performances that can be achieved include: >2.5 GHz with 0.75 V Vπ and 31.1 mm length, 10 GHz with 1.5 V V π and 7.8 mm length, > 40 GHz with 3.0 V Vπ and 1.9 mm length, and > 100 GHz with 4.8 V Vπ and 0.8 mm length. Various physical factors unique to the frequency-voltage-size performance trade-off of the thin-film EO modulator structures are discussed.

AB - We simulate thin-film based electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size by using BaTiO3 ferroelectric film as an exemplary device material with optimizing film thickness. The calculations are performed for both the case of an experimental film having reff = 35 pm/V and the case of an ideal thin-film having r51 = 730 pm/V. For the case of r51 = 730 pm/V, a new relation between the drive voltage and the interaction length is derived with respect to the special configuration of BaTiO3 thin-films. For the optimal case of the film thickness and the waveguide design, the frequency-voltage-size performances that can be achieved include: >2.5 GHz with 0.75 V Vπ and 31.1 mm length, 10 GHz with 1.5 V V π and 7.8 mm length, > 40 GHz with 3.0 V Vπ and 1.9 mm length, and > 100 GHz with 4.8 V Vπ and 0.8 mm length. Various physical factors unique to the frequency-voltage-size performance trade-off of the thin-film EO modulator structures are discussed.

KW - BaTiO thin-film

KW - Characteristic impedance

KW - Electro-optic modulator

KW - Frequency response

KW - Microwave propagation loss

KW - Optical waveguide

KW - Quadratic EO relation

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Performance simulation for ferroelectric thin-film based waveguide electro-optic modulators

Abstract

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Keywords

ASJC Scopus subject areas

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