TY - JOUR
T1 - Performance simulation for ferroelectric thin-film based waveguide electro-optic modulators
AU - Sun, De Gui
AU - Liu, Zhifu
AU - Huang, Yingyan
AU - Ho, Seng Tiong
AU - Towner, David J.
AU - Wessels, Bruce W.
N1 - Funding Information:
The authors gratefully acknowledge the funding of the research by the MRSEC program of the National Science Foundation (DMR-0076097) at Northwestern University and the 100-Person-Plan Program of the Chinese Academy of Sciences.
PY - 2005/11/15
Y1 - 2005/11/15
N2 - We simulate thin-film based electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size by using BaTiO3 ferroelectric film as an exemplary device material with optimizing film thickness. The calculations are performed for both the case of an experimental film having reff = 35 pm/V and the case of an ideal thin-film having r51 = 730 pm/V. For the case of r51 = 730 pm/V, a new relation between the drive voltage and the interaction length is derived with respect to the special configuration of BaTiO3 thin-films. For the optimal case of the film thickness and the waveguide design, the frequency-voltage-size performances that can be achieved include: >2.5 GHz with 0.75 V Vπ and 31.1 mm length, 10 GHz with 1.5 V V π and 7.8 mm length, > 40 GHz with 3.0 V Vπ and 1.9 mm length, and > 100 GHz with 4.8 V Vπ and 0.8 mm length. Various physical factors unique to the frequency-voltage-size performance trade-off of the thin-film EO modulator structures are discussed.
AB - We simulate thin-film based electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size by using BaTiO3 ferroelectric film as an exemplary device material with optimizing film thickness. The calculations are performed for both the case of an experimental film having reff = 35 pm/V and the case of an ideal thin-film having r51 = 730 pm/V. For the case of r51 = 730 pm/V, a new relation between the drive voltage and the interaction length is derived with respect to the special configuration of BaTiO3 thin-films. For the optimal case of the film thickness and the waveguide design, the frequency-voltage-size performances that can be achieved include: >2.5 GHz with 0.75 V Vπ and 31.1 mm length, 10 GHz with 1.5 V V π and 7.8 mm length, > 40 GHz with 3.0 V Vπ and 1.9 mm length, and > 100 GHz with 4.8 V Vπ and 0.8 mm length. Various physical factors unique to the frequency-voltage-size performance trade-off of the thin-film EO modulator structures are discussed.
KW - BaTiO thin-film
KW - Characteristic impedance
KW - Electro-optic modulator
KW - Frequency response
KW - Microwave propagation loss
KW - Optical waveguide
KW - Quadratic EO relation
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U2 - 10.1016/j.optcom.2005.06.028
DO - 10.1016/j.optcom.2005.06.028
M3 - Article
AN - SCOPUS:27144500700
SN - 0030-4018
VL - 255
SP - 319
EP - 330
JO - Optics Communications
JF - Optics Communications
IS - 4-6
ER -