Perovskite Single-Crystal Thin Film Devices Using Lithography Assisted Epitaxy

Xiwen Gong; Edward H. Sargent

doi:10.1016/j.matt.2020.08.006

Perovskite Single-Crystal Thin Film Devices Using Lithography Assisted Epitaxy

Xiwen Gong, Edward H. Sargent^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Strain engineering is an emerging technique to physically manipulate and enhance semiconductor device performance. Chen et al. recently combined strain engineering with halide perovskites, demonstrating a novel approach toward improvement in optoelectronic properties.

Original language	English (US)
Pages (from-to)	619-620
Number of pages	2
Journal	Matter
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/j.matt.2020.08.006
State	Published - Sep 2 2020

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.matt.2020.08.006

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title = "Perovskite Single-Crystal Thin Film Devices Using Lithography Assisted Epitaxy",

abstract = "Strain engineering is an emerging technique to physically manipulate and enhance semiconductor device performance. Chen et al. recently combined strain engineering with halide perovskites, demonstrating a novel approach toward improvement in optoelectronic properties.",

author = "Xiwen Gong and Sargent, {Edward H.}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Inc.",

year = "2020",

month = sep,

day = "2",

doi = "10.1016/j.matt.2020.08.006",

language = "English (US)",

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T1 - Perovskite Single-Crystal Thin Film Devices Using Lithography Assisted Epitaxy

AU - Gong, Xiwen

AU - Sargent, Edward H.

PY - 2020/9/2

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N2 - Strain engineering is an emerging technique to physically manipulate and enhance semiconductor device performance. Chen et al. recently combined strain engineering with halide perovskites, demonstrating a novel approach toward improvement in optoelectronic properties.

AB - Strain engineering is an emerging technique to physically manipulate and enhance semiconductor device performance. Chen et al. recently combined strain engineering with halide perovskites, demonstrating a novel approach toward improvement in optoelectronic properties.

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JO - Matter

JF - Matter

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ER -

Perovskite Single-Crystal Thin Film Devices Using Lithography Assisted Epitaxy

Abstract

ASJC Scopus subject areas

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