Perpendicular magnetization switching by large spin-orbit torques from sputtered Bi2Te3

Zhenyi Zheng, Daoqian Zhu, Kun Zhang, Xueqiang Feng, Yu He, Lei Chen, Zhizhong Zhang, Dijun Liu, Youguang Zhang, Pedram Khalili Amiri, Weisheng Zhao

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Spin-orbit torque (SOT) effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices. Recently, topological insulators (TIs) have gained extensive attention, as they are demonstrated to maintain a large effective spin Hall angle (), even at room temperature. However, molecular beam epitaxy (MBE), as a precise deposition method, is required to guarantee favorable surface states of TIs, which hinders the prospect of TIs towards industrial application. In this paper, we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy. By harmonic Hall measurement, a high SOT efficiency (8.7 ± 0.9 Oe/(109 A/m2)) and a large (3.3±0.3) are obtained at room temperature. Besides, we also observe an ultra-low critical switching current density (9.7×109 A/m2). Moreover, the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources. Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.

Original languageEnglish (US)
Article number078505
JournalChinese Physics B
Issue number7
StatePublished - Jul 2020

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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