Persistent photoconductivity and the quantized Hall effect in In 0.53Ga0.47As/InP heterostructures

H. P. Wei*, D. C. Tsui, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

A persistent photoconductivity is observed in the transport of the high mobility two-dimensional electron gas in In0.53Ga0.47 As/InP heterostructures. Low field Hall measurements from 300 to 4.2 K and the quantized Hall effect in the high field limit are studied with radiation from visible and infrared light-emitting diodes. Our results demonstrate conclusively that the effect is due to photogeneration of electron-hole pairs in the heterostructure and trapping of holes in the In0.53Ga0.47 As.

Original languageEnglish (US)
Pages (from-to)666-668
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number6
DOIs
StatePublished - Dec 1 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Persistent photoconductivity and the quantized Hall effect in In <sub>0.53</sub>Ga<sub>0.47</sub>As/InP heterostructures'. Together they form a unique fingerprint.

Cite this