A persistent photoconductivity is observed in the transport of the high mobility two-dimensional electron gas in In0.53Ga0.47 As/InP heterostructures. Low field Hall measurements from 300 to 4.2 K and the quantized Hall effect in the high field limit are studied with radiation from visible and infrared light-emitting diodes. Our results demonstrate conclusively that the effect is due to photogeneration of electron-hole pairs in the heterostructure and trapping of holes in the In0.53Ga0.47 As.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)