Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions

S. Ben Amor*, L. Dmowski, J. C. Portal, N. J. Pulsford, R. J. Nicholas, J. Singleton, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

We have studied the persistent photoconductivity (PPC) effect in Ga 0.49 In0.51 P/GaAs heterostructures. Through time- and temperature-dependent Hall effect, we observe very small relaxation rates and the PPC remains observable at room temperature. Optical experiments show an optical energy threshold of 1.15 eV and an infrared quenching of the PPC. Thermal cycling of the samples strongly affects the PPC and the quenching temperature. The center responsible for the observed PPC, therefore, appears related to defects. Most of our observations are qualitatively understood in a large lattice relaxation DX-like center approach. However, the origin of the high quenching temperature remains to be explained.

Original languageEnglish (US)
Pages (from-to)2756-2760
Number of pages5
JournalJournal of Applied Physics
Volume65
Issue number7
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Persistent photoconductivity in Ga<sub>0.49</sub>In<sub>0.51</sub>P/GaAs heterojunctions'. Together they form a unique fingerprint.

Cite this