Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells

Said Elhamri; M. Ahoujja; K. Ravindran; D. B. Mast; R. S. Newrock; W. C. Mitchel; G. J. Brown; Ikai Lo; Manijeh Razeghi; Xiaguang He

doi:10.1063/1.113553

Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells

Said Elhamri^*, M. Ahoujja, K. Ravindran, D. B. Mast, R. S. Newrock, W. C. Mitchel, G. J. Brown, Ikai Lo, Manijeh Razeghi, Xiaguang He

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas effects. After illumination with red light, the electron concentration increased from low 10¹¹ cm^-2 to more than 7×10¹¹ cm^-2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination.

Original language	English (US)
Pages (from-to)	171
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113553
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{be8348e12d0f443aa34b70b6efb8d4bf,

title = "Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells",

abstract = "Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm-2 to more than 7×1011 cm-2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination.",

author = "Said Elhamri and M. Ahoujja and K. Ravindran and Mast, {D. B.} and Newrock, {R. S.} and Mitchel, {W. C.} and Brown, {G. J.} and Ikai Lo and Manijeh Razeghi and Xiaguang He",

year = "1995",

doi = "10.1063/1.113553",

language = "English (US)",

pages = "171",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells

AU - Elhamri, Said

AU - Ahoujja, M.

AU - Ravindran, K.

AU - Mast, D. B.

AU - Newrock, R. S.

AU - Mitchel, W. C.

AU - Brown, G. J.

AU - Lo, Ikai

AU - Razeghi, Manijeh

AU - He, Xiaguang

PY - 1995

Y1 - 1995

N2 - Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm-2 to more than 7×1011 cm-2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination.

AB - Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov-de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm-2 to more than 7×1011 cm-2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination.

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DO - 10.1063/1.113553

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SN - 0003-6951

SP - 171

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells

Abstract

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