The authors present magnetotransport studies on very pure n-type InP epilayers unintentionally doped. From temperature and hydrostatic pressure dependences of the Hall carrier density they deduce the existence of a deep level with activation energy Ed2 of the order 180 meV and dependent upon pressure. After illumination of the sample with a radiation energy greater and smaller than the InP gap persistent photoconductivity (PPC) is observed and the study of the transient of recombination of excited carriers shows that spatial charge separation is the mechanism responsible for the persistence of the effect. This suggests that the deep centre L2 is located in the semi-insulator InP substrate.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry