Phase coherence between external electrodes in double-barrier Nb/Al-AlOx-Al-AlOx-Nb tunnel junctions

I. P. Nevirkovets*, J. B. Ketterson, S. E. Shafranjuk

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have experimentally investigated electron transport in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices. The devices with a "dirty" middle Al layer reveal a novel magnetic-field-sensitive subgap structure in the current-voltage characteristics, which is interpreted as manifestation of quantum Andreev bound states.

Original languageEnglish (US)
Pages (from-to)1834-1835
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
StatePublished - 2000

Funding

This research was supported by the Northwestern Materials Research Center under the NSF MRSEC program, DMR9309061.

Keywords

  • Andreev bound states
  • Josephson effect
  • Superconductivity
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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