We have experimentally investigated electron transport in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices. The devices with a "dirty" middle Al layer reveal a novel magnetic-field-sensitive subgap structure in the current-voltage characteristics, which is interpreted as manifestation of quantum Andreev bound states.
- Andreev bound states
- Josephson effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering