Abstract
Subsolidus phase relationships in the Ga2O3-In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°-1400°C. The solubility limit of In2O3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.8 ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped β-Ga2O3 solid solution.
Original language | English (US) |
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Pages (from-to) | 253-257 |
Number of pages | 5 |
Journal | Journal of the American Ceramic Society |
Volume | 80 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1997 |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry