Subsolidus phase relationships in the Ga2O3-In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°-1400°C. The solubility limit of In2O3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.8 ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped β-Ga2O3 solid solution.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of the American Ceramic Society|
|State||Published - Jan 1997|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry