Phase equilibria in the Ga2O3-In2O3 system

Doreen D. Edwards*, Pollyanna E. Folkins, Thomas O. Mason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

68 Scopus citations


Subsolidus phase relationships in the Ga2O3-In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°-1400°C. The solubility limit of In2O3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.8 ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped β-Ga2O3 solid solution.

Original languageEnglish (US)
Pages (from-to)253-257
Number of pages5
JournalJournal of the American Ceramic Society
Issue number1
StatePublished - Jan 1997

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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