TY - JOUR
T1 - Phase-field model of oxidation
T2 - Kinetics
AU - Kim, Kyoungdoc
AU - Sherman, Quentin C.
AU - Aagesen, Larry K.
AU - Voorhees, Peter W.
N1 - Funding Information:
We acknowledge the support from the ONR MURI under Grant No. N00014-16-1-2280 and the computing resources from Quest high performance facility at Northwestern University. The authors thank Rohit Ramanathan for valuable discussions, and a reviewer of an earlier version of this paper for very helpful comments.
Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/2
Y1 - 2020/2
N2 - The kinetics of oxidation is examined using a phase-field model of electrochemistry when the oxide film is smaller than the Debye length. As a test of the model, the phase-field approach recovers the results of classical Wagner diffusion-controlled oxide growth when the interfacial mobility of the oxide-metal interface is large and the films are much thicker than the Debye length. However, for small interfacial mobilities, where the growth is reaction controlled, we find that the film increases in thickness linearly in time, and that the phase-field model naturally leads to an electrostatic overpotential at the interface that affects the prefactor of the linear growth law. Since the interface velocity decreases with the distance from the oxide vapor, for a fixed interfacial mobility, the film will transition from reaction- to diffusion-controlled growth at a characteristic thickness. For thin films, we find that in the limit of high interfacial mobility we recover a Wagner-type parabolic growth law in the limit of a composition-independent mobility. A composition-dependent mobility leads to a nonparabolic kinetics at small thickness, but for the materials parameters chosen, the deviation from parabolic kinetics is small. Unlike classical oxidation models, we show that the phase-field model can be used to examine the dynamics of nonplanar oxide interfaces that are routinely observed in experiment. As an illustration, we examine the evolution of nonplanar interfaces when the oxide is growing only by anion diffusion and find that it is morphologically stable.
AB - The kinetics of oxidation is examined using a phase-field model of electrochemistry when the oxide film is smaller than the Debye length. As a test of the model, the phase-field approach recovers the results of classical Wagner diffusion-controlled oxide growth when the interfacial mobility of the oxide-metal interface is large and the films are much thicker than the Debye length. However, for small interfacial mobilities, where the growth is reaction controlled, we find that the film increases in thickness linearly in time, and that the phase-field model naturally leads to an electrostatic overpotential at the interface that affects the prefactor of the linear growth law. Since the interface velocity decreases with the distance from the oxide vapor, for a fixed interfacial mobility, the film will transition from reaction- to diffusion-controlled growth at a characteristic thickness. For thin films, we find that in the limit of high interfacial mobility we recover a Wagner-type parabolic growth law in the limit of a composition-independent mobility. A composition-dependent mobility leads to a nonparabolic kinetics at small thickness, but for the materials parameters chosen, the deviation from parabolic kinetics is small. Unlike classical oxidation models, we show that the phase-field model can be used to examine the dynamics of nonplanar oxide interfaces that are routinely observed in experiment. As an illustration, we examine the evolution of nonplanar interfaces when the oxide is growing only by anion diffusion and find that it is morphologically stable.
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U2 - 10.1103/PhysRevE.101.022802
DO - 10.1103/PhysRevE.101.022802
M3 - Article
C2 - 32168680
AN - SCOPUS:85082098525
SN - 2470-0045
VL - 101
JO - Physical Review E
JF - Physical Review E
IS - 2
M1 - 022802
ER -