Phase relations, transparency and conductivity in Ga2O3-SnO2-ZnO

G. B. Palmer; K. R. Poeppelmeier

doi:10.1016/S1293-2558(01)01258-4

Phase relations, transparency and conductivity in Ga₂O₃-SnO₂-ZnO

G. B. Palmer, K. R. Poeppelmeier^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

Subsolidus phase relationships in the Ga₂O₃-SnO₂-ZnO system were determined at 1250°C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn₂SnO₄ and ZnGa₂O₄, formed a complete solid solution. The optical band gap of the spinel varied with composition from 3.6 eV (Zn₂SnO₄) to 4.7 eV (ZnGa₂O₄). All samples were white and insulating except those containing Ga-doped ZnO. The phase relations and physical properties of Ga₂O₃-SnO₂-ZnO were compared with those of In₂O₃-SnO₂-ZnO.

Original language	English (US)
Pages (from-to)	317-322
Number of pages	6
Journal	Solid State Sciences
Volume	4
Issue number	3
DOIs	https://doi.org/10.1016/S1293-2558(01)01258-4
State	Published - 2002

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/S1293-2558(01)01258-4

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title = "Phase relations, transparency and conductivity in Ga2O3-SnO2-ZnO",

abstract = "Subsolidus phase relationships in the Ga2O3-SnO2-ZnO system were determined at 1250°C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn2SnO4 and ZnGa2O4, formed a complete solid solution. The optical band gap of the spinel varied with composition from 3.6 eV (Zn2SnO4) to 4.7 eV (ZnGa2O4). All samples were white and insulating except those containing Ga-doped ZnO. The phase relations and physical properties of Ga2O3-SnO2-ZnO were compared with those of In2O3-SnO2-ZnO.",

author = "Palmer, {G. B.} and Poeppelmeier, {K. R.}",

note = "Funding Information: This work was supported by the MRSEC program of the National Science Foundation (DMR-0076097) at Northwestern University and made use of the Central Facilities of the same MRSEC program. George Palmer was supported by a National Defense Science and Engineering Graduate fellowship funded by the Office of Naval Research. Dr. Jon Schindler and Professor Carl Kannewurf of the Electrical and Computer Engineering Department at Northwestern University provided training on and use of the four probe conductivity apparatus. ",

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doi = "10.1016/S1293-2558(01)01258-4",

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AU - Poeppelmeier, K. R.

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PY - 2002

Y1 - 2002

N2 - Subsolidus phase relationships in the Ga2O3-SnO2-ZnO system were determined at 1250°C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn2SnO4 and ZnGa2O4, formed a complete solid solution. The optical band gap of the spinel varied with composition from 3.6 eV (Zn2SnO4) to 4.7 eV (ZnGa2O4). All samples were white and insulating except those containing Ga-doped ZnO. The phase relations and physical properties of Ga2O3-SnO2-ZnO were compared with those of In2O3-SnO2-ZnO.

AB - Subsolidus phase relationships in the Ga2O3-SnO2-ZnO system were determined at 1250°C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn2SnO4 and ZnGa2O4, formed a complete solid solution. The optical band gap of the spinel varied with composition from 3.6 eV (Zn2SnO4) to 4.7 eV (ZnGa2O4). All samples were white and insulating except those containing Ga-doped ZnO. The phase relations and physical properties of Ga2O3-SnO2-ZnO were compared with those of In2O3-SnO2-ZnO.

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Phase relations, transparency and conductivity in Ga₂O₃-SnO₂-ZnO

Abstract

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