Phase-selective route to high Tc superconducting Tl 2Ba2Can-1CunO2n+4 films: Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion

Graziella Malandrino; Darrin S. Richeson; Tobin J. Marks; Donald C. DeGroot; Jon L. Schindler; Carl R. Kannewurf

doi:10.1063/1.104966

Phase-selective route to high T_c superconducting Tl ₂Ba₂Ca_n-1Cu_nO_2n+4 films: Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion

Graziella Malandrino^*, Darrin S. Richeson, Tobin J. Marks, Donald C. DeGroot, Jon L. Schindler, Carl R. Kannewurf

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Films of the Tl₂Ba₂Ca_n-1Cu _nO_2n+4 high T_c superconductors (n=2 or 3) can be prepared with a high degree of phase selectivity using a combination of metalorganic chemical vapor deposition (MOCVD) and vapor diffusion. Ba-Ca-Cu-O films are first prepared by MOCVD using the volatile metalorganic precursors Ba(hexafluoroacetyl- acetonate)₂(tetraglyme), Ca(dipivaloylmethanate) ₂, and Cu(acetylacetonate)₂. The "second- generation" barium precursor exhibits significantly improved thermal stability and volatility over previously used compounds. Thallium is then incorporated into these films by vapor diffusion using a Tl-Ba-Ca-Cu oxide mixture of controlled composition as the source of volatile thallium oxides. Phase control is achieved by a combination of improved stoichiometry of the deposited film, a result of the new Ba source, and annealing with the appropriate oxide mixture. The resultant films consist predominantly of the Tl₂Ba₂Ca₂Cu₃O_x or Tl ₂Ba₂CaCu₂O_x phase, each having preferential orientation of the crystallite Cu-O planes parallel to the substrate surface. The films exhibit superconducting onset temperatures of ∼115 K with zero resistance by 93 and 85 K, respectively. Critical current densities for a number of films, estimated by the Bean method, are in the range 10⁴-10⁵ A/cm² at 5 K.

Original language	English (US)
Pages (from-to)	182-184
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	2
DOIs	https://doi.org/10.1063/1.104966
State	Published - 1991

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Physics and Astronomy (miscellaneous)

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Malandrino, G., Richeson, D. S., Marks, T. J., DeGroot, D. C., Schindler, J. L., & Kannewurf, C. R. (1991). Phase-selective route to high T_c superconducting Tl ₂Ba₂Ca_n-1Cu_nO_2n+4 films: Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion. Applied Physics Letters, 58(2), 182-184. https://doi.org/10.1063/1.104966

@article{85eab0a893c64a94a85903dac1be512f,

title = "Phase-selective route to high Tc superconducting Tl 2Ba2Can-1CunO2n+4 films: Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion",

abstract = "Films of the Tl2Ba2Can-1Cu nO2n+4 high Tc superconductors (n=2 or 3) can be prepared with a high degree of phase selectivity using a combination of metalorganic chemical vapor deposition (MOCVD) and vapor diffusion. Ba-Ca-Cu-O films are first prepared by MOCVD using the volatile metalorganic precursors Ba(hexafluoroacetyl- acetonate)2(tetraglyme), Ca(dipivaloylmethanate) 2, and Cu(acetylacetonate)2. The {"}second- generation{"} barium precursor exhibits significantly improved thermal stability and volatility over previously used compounds. Thallium is then incorporated into these films by vapor diffusion using a Tl-Ba-Ca-Cu oxide mixture of controlled composition as the source of volatile thallium oxides. Phase control is achieved by a combination of improved stoichiometry of the deposited film, a result of the new Ba source, and annealing with the appropriate oxide mixture. The resultant films consist predominantly of the Tl2Ba2Ca2Cu3Ox or Tl 2Ba2CaCu2Ox phase, each having preferential orientation of the crystallite Cu-O planes parallel to the substrate surface. The films exhibit superconducting onset temperatures of ∼115 K with zero resistance by 93 and 85 K, respectively. Critical current densities for a number of films, estimated by the Bean method, are in the range 104-105 A/cm2 at 5 K.",

author = "Graziella Malandrino and Richeson, {Darrin S.} and Marks, {Tobin J.} and DeGroot, {Donald C.} and Schindler, {Jon L.} and Kannewurf, {Carl R.}",

year = "1991",

doi = "10.1063/1.104966",

language = "English (US)",

volume = "58",

pages = "182--184",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

Malandrino, G, Richeson, DS, Marks, TJ, DeGroot, DC, Schindler, JL & Kannewurf, CR 1991, 'Phase-selective route to high T_c superconducting Tl ₂Ba₂Ca_n-1Cu_nO_2n+4 films: Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion', Applied Physics Letters, vol. 58, no. 2, pp. 182-184. https://doi.org/10.1063/1.104966

Phase-selective route to high T_c superconducting Tl ₂Ba₂Ca_n-1Cu_nO_2n+4 films : Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion. / Malandrino, Graziella; Richeson, Darrin S.; Marks, Tobin J. et al.

In: Applied Physics Letters, Vol. 58, No. 2, 1991, p. 182-184.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Phase-selective route to high Tc superconducting Tl 2Ba2Can-1CunO2n+4 films

T2 - Combined metalorganic chemical vapor deposition using an improved barium precursor and stoichiometry-controlled thallium vapor diffusion

AU - Malandrino, Graziella

AU - Richeson, Darrin S.

AU - Marks, Tobin J.

AU - DeGroot, Donald C.

AU - Schindler, Jon L.

AU - Kannewurf, Carl R.

PY - 1991

Y1 - 1991

N2 - Films of the Tl2Ba2Can-1Cu nO2n+4 high Tc superconductors (n=2 or 3) can be prepared with a high degree of phase selectivity using a combination of metalorganic chemical vapor deposition (MOCVD) and vapor diffusion. Ba-Ca-Cu-O films are first prepared by MOCVD using the volatile metalorganic precursors Ba(hexafluoroacetyl- acetonate)2(tetraglyme), Ca(dipivaloylmethanate) 2, and Cu(acetylacetonate)2. The "second- generation" barium precursor exhibits significantly improved thermal stability and volatility over previously used compounds. Thallium is then incorporated into these films by vapor diffusion using a Tl-Ba-Ca-Cu oxide mixture of controlled composition as the source of volatile thallium oxides. Phase control is achieved by a combination of improved stoichiometry of the deposited film, a result of the new Ba source, and annealing with the appropriate oxide mixture. The resultant films consist predominantly of the Tl2Ba2Ca2Cu3Ox or Tl 2Ba2CaCu2Ox phase, each having preferential orientation of the crystallite Cu-O planes parallel to the substrate surface. The films exhibit superconducting onset temperatures of ∼115 K with zero resistance by 93 and 85 K, respectively. Critical current densities for a number of films, estimated by the Bean method, are in the range 104-105 A/cm2 at 5 K.

AB - Films of the Tl2Ba2Can-1Cu nO2n+4 high Tc superconductors (n=2 or 3) can be prepared with a high degree of phase selectivity using a combination of metalorganic chemical vapor deposition (MOCVD) and vapor diffusion. Ba-Ca-Cu-O films are first prepared by MOCVD using the volatile metalorganic precursors Ba(hexafluoroacetyl- acetonate)2(tetraglyme), Ca(dipivaloylmethanate) 2, and Cu(acetylacetonate)2. The "second- generation" barium precursor exhibits significantly improved thermal stability and volatility over previously used compounds. Thallium is then incorporated into these films by vapor diffusion using a Tl-Ba-Ca-Cu oxide mixture of controlled composition as the source of volatile thallium oxides. Phase control is achieved by a combination of improved stoichiometry of the deposited film, a result of the new Ba source, and annealing with the appropriate oxide mixture. The resultant films consist predominantly of the Tl2Ba2Ca2Cu3Ox or Tl 2Ba2CaCu2Ox phase, each having preferential orientation of the crystallite Cu-O planes parallel to the substrate surface. The films exhibit superconducting onset temperatures of ∼115 K with zero resistance by 93 and 85 K, respectively. Critical current densities for a number of films, estimated by the Bean method, are in the range 104-105 A/cm2 at 5 K.

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