Phase stability and optoelectronic properties of the bixbyite phase in the gallium-indium-tin-oxide system

X-ray diffraction techniques were used to determine the phase boundaries of the In₂O₃ solid solution phase in the Ga₂O₃-In₂O₃-SnO₂ ternary system. The effects of Ga and Sn content on the unit cell dimensions of the bixbyite phase were calculated by a linear regression fit, the results of which indicate the two substitutive cations have opposite and independent effects on the lattice parameter. These results suggest that the cations do not strongly interact with each other in the crystal. Measurements of optoelectronic properties were also taken on single-phase bulk specimens within the solid solution to establish their dependence on composition. As anticipated, Sn doping yields corresponding increases in conductivity, reduction in the absolute value of Seebeck coefficient, and increase in optical band gap. In contrast, these properties are not significantly affected by varying Ga content, confirming that Ga behaves as an isovalent dopant at the low doping levels involved.