Phase stability and optoelectronic properties of the bixbyite phase in the gallium-indium-tin-oxide system

Alex Dolgonos, Spencer A. Wells, Kenneth R. Poeppelmeier, Thomas O. Mason*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

X-ray diffraction techniques were used to determine the phase boundaries of the In2O3 solid solution phase in the Ga2O3-In2O3-SnO2 ternary system. The effects of Ga and Sn content on the unit cell dimensions of the bixbyite phase were calculated by a linear regression fit, the results of which indicate the two substitutive cations have opposite and independent effects on the lattice parameter. These results suggest that the cations do not strongly interact with each other in the crystal. Measurements of optoelectronic properties were also taken on single-phase bulk specimens within the solid solution to establish their dependence on composition. As anticipated, Sn doping yields corresponding increases in conductivity, reduction in the absolute value of Seebeck coefficient, and increase in optical band gap. In contrast, these properties are not significantly affected by varying Ga content, confirming that Ga behaves as an isovalent dopant at the low doping levels involved.

Original languageEnglish (US)
Pages (from-to)669-674
Number of pages6
JournalJournal of the American Ceramic Society
Volume98
Issue number2
DOIs
StatePublished - Dec 3 2014

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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